ES2JT

R ES2AT THRU ES2JT S E M I C O N D U C T O R Surface Mount Superfast Rectifiers Reverse Voltage – 50 to 600 V PINNING Forward Current –2 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Juntion • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: ES2AT~ES2JT Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg 0.00086oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES2AT ES2BT ES2CF ES2DT ES2ET ES2GT ES2JT Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T L = 100 °C I F(AV) 2 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 50 A Maximum Forward Voltage at 2A VF Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C 1.25 1 1.7 V IR 5 100 μA Typical Junction Capacitance at V R =4V, f=1MHz Cj 60 pF Maximum Reverse Recovery Time at I F =0.5A, I R =1A, I rr =0.25A t rr 35 ns T j , T stg -55 ~ +150 °C Operating and Storage Temperature Range JINANJINAN JINGHENG ELECTRONICS CO., LTD. JINGHENG ELECTRONICS CO., LTD. 3-1 2-1 HTTP://WWW.JINGHENG.CN HTTP://WWW.JINGHENG.CN ES2AT THRU ES2JT Surface Mount Superfast Rectifiers Characteristic Curves (TA=25 ℃ unless otherwise noted) Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 2.4 300 2.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 1.6 1.2 0.8 Single phase half wave resistive or inductive P.C.B mounted on 0.315×0. 315"(8.0×8. 0mm ) pad areas 0.4 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Lead Temperature (°C) 80 60 100 % of PIV.VOLTS Fig.5 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 70 10 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 40 20 ES2AT 1.0 ES2ET ES2JT 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 50 40 30 T J =25°C f = 1.0MHz V sig = 50mV p-p 20 10 0.1 Instaneous Forward Voltage (V) JINAN JINAN JINGHENG JINGHENG ELECTRONICS ELECTRONICS CO., CO., LTD. LTD. 60 1 10 100 Reverse Voltage (V) 3-2 3-2 HTTP://WWW.JINGHENG.CN HTTP://WWW.JINGHENG.CN ES2AT THRU ES2JT Surface Mount Superfast Rectifiers PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF FL ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View A C D E e g HE max 1.2 0.23 3.7 2.7 1.6 1.3 4.9 min 0.9 0.18 3.3 2.4 1.3 1.0 4.4 max 47 9.1 146 106 63 51 193 min 35.4 7.1 130 94 51 39 173 UNIT mm g pad e E A pad HE ∠ 7° The recommended mounting pad size Marking Type number 2.8(110) Marking code 1.6(63) 1.8(71) 1.6(63) Unit：mm(mil) JINAN JINGHENG ELECTRONICS CO., LTD. 3-3 ES2AT ES2AT ES2BT ES2BT ES2CT ES2CT ES2DT ES2DT ES2E T ES2ET ES2GT ES2GT ES2J T ES2J T HTTP://WWW.JINGHENG.CN