RS1MF

RS1AF THRU RS1MF HD AF46 SMAF Plastic-Encapsulate Diodes Features ●Io 1A SMAF ●VRRM 50V-1000V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● RS1AF-RS1MF : RS1A-RS1M RS1 AF BF DF GF JF 70 140 280 420 KF MF 50 Maximum RMS Voltage V RMS 35 V 560 700 90℃ RS1 AF BF DF GF JF KF MF 1) Between junction and ambient 105 Between junction and terminal 32 1) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas High Diode Semiconductor 1 Typical Characteristics  FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 1.0  0.8 0.6 TL=90ć 8.3ms Single Half Sine Wave 40 30 0.4 20 0.2 0 50 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0 10 50 150 Ta(ć) 100 0 1 10 100 Number of Cycles  FIG.4˖TYPICAL REVERSE CHARACTERISTICS IR(uA) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 100 TJ=25ć Pulse width=300us 1% Duty Cycle 100 10 10 1.0 1.0 0.1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj=150ć Tj=100ć Tj=25ć 0.01 0 1.8 VF(V) 20 40 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SMAF .193(4.90) .173(4.40) .047(1.20) .035(0.90) .146(3.70) .130(3.30) .063(1.60) .106(2.70) .051(1.30) .094(2.40) .007(0.18) .005(0.12) .051(1.30) .031(0.80) Dimensions in inches and (millimeters) SMAF 1.9 4.65 0.55 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Dev ices- SMAF High Diode Semiconductor 4