MXD8641H
SP4T Switch for 2G/3G/4G Application
VED
APPRO
This document contains information that is confidential and proprietary to Maxscend Technologies Inc.
(Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No
transfer or licensing of technology is implied by this document.
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MXD8641H – SP4T for LTE diversity and RX
General Description
Applications
The MXD8641H is a SOI SP4T switch suitable for
GSM/LTE/UMTS/CDMA transmit and receive
2G/3G/4G TRX applications
Cellular modems and USB Devices
applications. The MXD8641H features very low
insertion loss, high isolation and excellent
Features
linearity performance down to 1.0V control
voltage at high frequency up to 2.7GHz. In
Excellent insertion loss and isolation
performance
addition, this switch is able to handle high power
- 0.5 dB Insertion Loss at 2.7GHz
signals up to 36dBm. The MXD8641H has
- 25 dB Isolation at 2.7GHz
internal ESD protection devices to achieve
excellent ESD performances. No DC Blocking
capacitors are required for all RF ports unless
DC is biased externally. And the compact QFN-
Multi-Band operation 100MHz to 3000MHz
P0.1dB of 36dBm
Compact 2mm x 2mm in QFN-14 package
No DC blocking capacitors required (unless
14L 2mm×2mm×0.55mm package is adopted.
external DC is applied to the RF ports)
Functional Block Diagram and Pin Function
RF1
3
VDD
4
12
2
NC
RF3
13
1
ANT
ANT
RF3
NC
14
RF2
NC
RF1
Ground
Paddle
11
NC
10
RF4
9
RF2
8
NC
RF4
6
7
V3
V2
V1
V2
5
VDD V1
V3
Figure 1 Functional Block Diagram and Pinout (Top View)
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MXD8641H – SP4T for LTE diversity and RX
ANT
Application Circuit
RF1
VDD
VDD
12
RF1
13
14
RF3
RF3
NC
ANT
NC
NC
1
11
2
10
3
9
4
8
NC
RF4
RF2
RF4
RF2
NC
C4
100pF
V1
C2
100pF
V2
V3
C1
100pF
7
6
5
V3
V2
V1
C3
100pF
Figure 2 MXD8641H Evaluation Board Schematic
Table 1. Pin Description
Pin No.
1
2
3
4
5
6
7
Ground
Paddle
Name
NC
RF3
RF1
VDD
V3
V2
V1
GND
Description
No connection
RF port3
RF port1
Power supply
Control logic 3#
Control logic 2#
Control logic 1#
Ground
Pin No.
8
9
10
11
12
13
14
Name
NC
RF2
RF4
NC
NC
ANT
NC
Description
No connection
RF port2
RF port4
No connection
No connection
Antenna port
No connection
Note: Bottom ground paddles must be connected to ground.
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MXD8641H – SP4T for LTE diversity and RX
Truth Table
Table 2.
Control pins
V1
0
0
0
0
Note:
V2
0
0
1
1
Switched RF Outputs
V3
0
1
0
1
RF1
Insertion Loss
Isolation
Isolation
Isolation
RF2
Isolation
Insertion Loss
Isolation
Isolation
RF3
Isolation
Isolation
Insertion Loss
Isolation
RF4
Isolation
Isolation
Isolation
Insertion Loss
“1” = 1.0 V to 3.0 V. “0” = 0 V to 0.3 V.
Recommended Operation Range
Table 3. Recommended Operation Condition
Parameters
Operation Frequency
Power supply
Switch Control Voltage High
Switch Control Voltage Low
Symbol
f1
VDD
VH
VL
Min
0.1
2.5
1.0
0
Typ
‐
2.8
1.8
0
Max
3.0
3.0
3.0
0.3
Units
GHz
V
V
V
Specifications
Table 4. Electrical Specifications
Parameter
Test Condition
(Note 2)
Symbol
Min
Typical
Max
Units
DC Specifications
Supply voltage
VDD
2.5
2.8
3.0
V
Supply current
IDD
VCTL_H
VCTL_L
ICTL
40
1.35
1.80
VCTL = 1.8 V
0.5
60
3.0
0.3
1.0
uA
V
V
μA
10% to 90% RF
1
2
ìs
Time from VDD=0V to part
ON and RF at 90%
5
10
ìs
0.50
0.55
0.60
35
28
22
20
18
15
0.40
0.45
0.50
40
33
25
25
22
20
dB
dB
dB
dB
dB
dB
dB
dB
dB
36
Control voltage: High Low
Control current
Switching Speed, on RF to
another
Turn‐on time
ton
RF Specifications
Insertion loss (ANT pin to
RF1/2/3/4 pins)
IL
Isolation (ANT pin to
RF1/2/3/4 pins)
Iso
Input return loss (ANT pin to
RF1/2/3/4 pins)
RL
0.1 dB Compression Point
(ANT pin to RF1/2/3/4 pins)
P0.1dB
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.1 GHz to 3.0 GHz
dBm
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MXD8641H – SP4T for LTE diversity and RX
Absolute Maximum Ratings
Table 5. Maximum ratings
Parameters
Symbol
Minimum
Maximum
Units
Supply voltage
Control voltage (V1,
V2, and V3)
RF input power (RF1
to RF4)
Operating temperature
Storage temperature
Electrostatic
Discharge, Human
Body Model (HBM),
Class 1C
VDD
2.5
+3.0
V
VCTL
0
+3.0
V
+36
dBm
+85
+125
℃
℃
1000
V
PIN
TOP
TSTG
–20
–40
ESD
Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device
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MXD8641H – SP4T for LTE diversity and RX
Package Outline Dimension
Figure 3 package outline dimension
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MXD8641H – SP4T for LTE diversity and RX
Reflow Chart
tP
Critical Zone
TL to TP
P
Ramp‐up
Temperature
L
TSmax
tL
TSmin
Ramp‐down
tS
Preheat
t 25 ℃ to Peak
Time
Figure 4 Recommended Lead-Free Reflow Profile
Table 6. Reflow condition
Profile Parameter
Ramp-up rate(TSmax to Tp)
Preheat temperature(TSmin to TSmax)
Preheat time(ts)
Time above TL , 217℃(tL)
Peak temperature(Tp)
Time within 5℃ of peak temperature(tp)
Ramp-down rate
Time 25℃ to peak temperature
Lead-Free Assembly, Convection, IR/Convection
3℃/second max.
150℃ to 200℃
60 - 180 seconds
60 - 150 seconds
260℃
20 - 40 seconds
6℃/second max.
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
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