MXD8661H
High Power SP6T for 2G/3G/4G Applications
VED
APPRO
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(Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No
transfer or licensing of technology is implied by this document.
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MXD8661H – High Power SP6T for 2G/3G/4G Applications
General Description
Features
The MXD8661H is a low loss, high power SP6T
Excellent insertion loss and isolation
performance
switch for 2G/3G/4G TRX applications.
- 0.5 dB Insertion Loss at 2.7GHz
The MXD8661H is compatible with +1.0V control
- 25 dB Isolation at 2.7GHz
logic, which is a key requirement for most
- 36dBm of P0.1dB
cellular transceivers. This part is packaged in a
compact 2mm x 2mm, 14-pin, QFN package
which allows for a small solution size with no
Multi-Band operation 100MHz to 3000MHz
Compact 2mm x 2mm in QFN-14
package,MSL1
need for external DC blocking capacitors (when
no external DC is applied to the device ports).
No DC blocking capacitors required (unless
external DC is applied to the RF ports)
Applications
2G/3G/4G TRX
Cellular modems and USB Devices
Functional Block Diagram and Pin Function
NC
ANT
NC
14
13
12
RF1
RF2
RF3
ANT
RF4
RF5
RF5
1
RF3
2
RF1
3
VDD
4
Ground
Paddle
11
RF6
10
RF4
9
RF2
8
NC
RF6
6
7
V3
V2
V1
V2
5
VDD V1
V3
Figure 1 Functional Block Diagram and Pinout (Top View)
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MXD8661H – High Power SP6T for 2G/3G/4G Applications
ANT
Application Circuit
RF3
RF1
RF1
VDD
VDD
12
RF3
13
14
RF5
NC
ANT
NC
RF5
1
11
2
10
3
9
4
8
RF6
RF4
RF2
RF6
RF4
RF2
NC
C4
100pF
V1
C2
100pF
V2
V3
C1
100pF
7
6
5
V3
V2
V1
C3
100pF
Figure 2 MXD8661H Evaluation Board Schematic
Table 1. Pin Description
Pin No.
1
2
3
4
5
6
7
Ground
Paddle
Name
RF5
RF3
RF1
VDD
V3
V2
V1
Description
RF port5
RF port3
RF port1
Power supply
Control logic 3#
Control logic 2#
Control logic 1#
GND
Ground
Pin No.
8
9
10
11
12
13
14
Name
NC
RF2
RF4
RF6
NC
ANT
NC
Description
No connection
RF port2
RF port4
RF port6
No connection
Antenna port
No connection
Note: Bottom ground paddles must be connected to ground.
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MXD8661H – High Power SP6T for 2G/3G/4G Applications
Truth Table
Table 2.
Control pins
V1
V2
V3
0
0
0
0
0
1
Switched RF Outputs
RF1
Insertion
Loss
Isolation
RF2
RF3
RF4
RF5
RF6
Isolation
Isolation
Isolation
Isolation
Isolation
Insertion
Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
0
1
0
Isolation
Isolation
Insertion
Loss
0
1
1
Isolation
Isolation
Isolation
Insertion
Loss
Isolation
Isolation
1
0
0
Isolation
Isolation
Isolation
Isolation
Insertion
Loss
Isolation
1
0
1
Isolation
Isolation
Isolation
Isolation
Isolation
Insertion
Loss
1
1
X
Note:
Isolation
“1” = 1.0 V to 3.0 V. “0” = 0 V to 0.3 V.
Recommended Operation Range
Table 3. Recommended Operation Condition
Parameters
Operation Frequency
Power supply
Switch Control Voltage High
Switch Control Voltage Low
Symbol
Min
Typ
Max
f1
VDD
VH
VL
0.1
2.5
1.0
0
2.8
1.8
0
3.0
3.0
3.0
0.3
Units
GHz
V
V
V
Specifications
Table 4. Electrical Specifications
Parameter
Symbol
Test Condition
Min
Typical
Max
Units
2.5
2.8
3.0
V
45
70
uA
1.0
0
1.8
0
3.0
0.3
V
V
0.5
1.0
μA
0.5
1
μs
5
10
μs
0.35
0.45
0.50
40
35
25
40
34
24
25
22
20
0.40
0.50
0.60
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
DC Specifications
Supply voltage
Supply current
Control voltage: High Low
Control current
VDD
IDD
VCTL_H
VCTL_L
ICTL
Switching Speed, on RF to
another
Turn-on time
VCTL = 1.8 V
10% to 90% RF
ton
Time from VDD=0V to part
ON and RF at 90%
RF Specifications
Insertion loss (ANT pin to
RF1/2/3/4/5/6 pins)
IL
Isolation (ANT pin to RF1/2/3/4/5/6
pins)
Iso
Isolation
(RFx pin to the other RF pins in
RFx to ANT mode,x=1/2/3/4/5/6)
Iso
Input return loss (ANT pin to
RF1/2/3/4/5/6 pins)
RL
0.1 dB Compression Point (ANT
pin to RF1/2/3/4/5/6 pins)
P0.1dB
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.5 GHz to 3.0 GHz
35
30
22
34
28
20
20
18
15
+36
dBm
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MXD8661H – High Power SP6T for 2G/3G/4G Applications
Absolute Maximum Ratings
Table 5. Maximum ratings
Parameters
Symbol
Minimum
Maximum
Units
Supply voltage
Control voltage (V1,
V2, and V3)
RF input power (RF1
to RF6)
Operating temperature
Storage temperature
Electrostatic Discharge
Human body model
(HBM), Class 1C
Machine Model (MM),
Class A
Charged device model
(CDM), Class III
VDD
2.5
+3.3
V
VCTL
0
+3.0
V
+36
dBm
+90
+125
℃
℃
PIN
TOP
TSTG
–30
–40
ESD_HBM
1000
ESD_MM
100
ESD_CDM
500
V
Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device
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MXD8661H – High Power SP6T for 2G/3G/4G Applications
Package Outline Dimension
Figure 3 package outline dimension
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MXD8661H – High Power SP6T for 2G/3G/4G Applications
Marking Specification
Figure 4 Marking specification (Top View)
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MXD8661H – High Power SP6T for 2G/3G/4G Applications
Reflow Chart
tP
TP
Critical Zone
TL to TP
Ramp-up
Temperature
TL
TSmax
tL
TSmin
Ramp-down
tS
Preheat
t 25 ℃ to Peak
Time
Figure 5 Recommended Lead-Free Reflow Profile
Table 6. Reflow condition
Profile Parameter
Ramp-up rate(TSmax to Tp)
Preheat temperature(TSmin to TSmax)
Preheat time(ts)
Time above TL , 217℃(tL)
Peak temperature(Tp)
Time within 5℃ of peak temperature(tp)
Ramp-down rate
Time 25℃ to peak temperature
Lead-Free Assembly, Convection, IR/Convection
3℃/second max.
150℃ to 200℃
60 - 180 seconds
60 - 150 seconds
260℃
20 - 40 seconds
6℃/second max.
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
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