MH254EST

MH254 Specifications Micropower CMOS Unipolar Hall Effect Switch MH254 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH254 is special made for low operation voltage, 1.65V, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of unipolar magnetic fields for operation. The package type is in a Halogen Free version has been verified by third party Lab. Features and Benefits       CMOS Hall IC Technology Strong RF noise protection 1.65 to 6V for battery-powered applications Operation down to 1.65V, Unipolar Hall Switch Micro power consumption High Sensitivity for reed switch replacement applications Low sensitivity drift in crossing of Temp. range  Ultra Low power consumption at 5uA (Avg) High ESD Protection, HBM > ±4KV( min ) Totem-pole output   Applications       Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set) Magnet proximity sensor for reed switch replacement in low duty cycle applications Water Meter PDA PDVD   NB Pad PC 011515 Page 1 of 4 Rev. 1.01 MH254 Specifications Micropower CMOS Unipolar Hall Effect Switch Ordering Information XXXXXXXXX - X Company Name and Product Category MH:MST Hall Effect/MP:MST Power MOSFET Part number Sorting Code 181,182,183,184,185,248,249,276,477,381,381F,381R,382….. If part # is just 3 digits, the forth digit will be omitted. Package type Temperature range Temperature Code Part number E: 85 ℃, I: 105 ℃, K: 125 ℃, L: 150 ℃ Package type UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23, Company Name and Product Category SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin) Sorting α,β,Blank….. Part No. MH254EST Temperature Suffix E (-40℃ to + 85℃) Package Type ST (TSOT-23) Custom sensitivity selection is available by MST sorting technology Functional Diagram VDD Awake/Sleep Timing Control Offset Cancellation VDD Control Logic Amp Out Hall Sensor GND Note: Static sensitive device; please observe ESD precautions. Reverse V DD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. MH254, HBM > ±4KV which is verified by third party lab. 011515 Page 2 of 4 Rev. 1.01 MH254 Specifications Micropower CMOS Unipolar Hall Effect Switch Absolute Maximum Ratings At(Ta=25℃) Characteristics Values Unit Supply voltage,(VDD) 7 V Output Voltage,(Vout) 7 V -0.3 V Unlimited Gauss 1 mA Operating temperature range, (Ta) -40 to +85 ℃ Storage temperature range, (Ts) -65 to +150 ℃ Maximum Junction Temp,(Tj) 150 ℃ 227 / 540 ℃/W 49 / 390 ℃/W 550 / 230 mW Reverse Voltage , (VDD) (VOUT) Magnetic flux density Output current,(IOUT) (θJA) Thermal Resistance VK / SN (θJC) VK / SN Package Power Dissipation, (PD) VK / SN Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters：Ta=25℃, VDD=1.8V Parameters Supply Voltage,(VDD) Supply Current,(IDD) Test Conditions Operating Min 1.65 Sleep State 3.6 7 μA 5 10 μA 1 uA IOUT=0.5mA(Source) Output Low Voltage,(VOL) IOUT=0.5mA(Sink) Awake mode time,(Taw) Operating Sleep mode time,(TSL) Operating V VDD-0.2 Duty Cycle,(D,C) 011515 Volts mA Output High Current,(I off) Voltage,(VOH) Hysteresis-(BHYS) 6 3 Output off Release Point-(Brp) Units 1.4 Output Leakage Operating Point –(Bop)) Max Awake State Average Electro-Static Discharge Typ 0.2 V 40 80 uS 40 80 mS 0.1 HBM % 4 KV N pole to branded side, B > BOP, 30 50 Gauss Oout On N pole to branded side, B < BRP, 10 20 Gauss 10 Gauss Vout Off |BOPx - BRPx| Page 3 of 4 Rev. 1.01 MH254 Specifications Micropower CMOS Unipolar Hall Effect Switch Typical application circuit C1：10nF C2：100pF Sensor Location, package dimension and marking MH254 Package 011515 Page 4 of 4 Rev. 1.01