MH180KSO

MH180 Specifications Multi-Purpose Hall Effect Latch MH180 Hall-effect sensor is a temperature stable, stress-resistant sensor. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH180 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, Advanced DMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of both south and north polarity magnetic fields for operation. In the presence of a south polarity field of sufficient strength, the device output sensor on, and only switches off when a north polarity field of sufficient strength is present. MH180 is rated for operation between the ambient temperatures –40℃ and 85℃ for the E temperature range, and –40℃ to 125℃ for the K temperature range. The two package styles available provide magnetically optimized solutions for most applications. Package SO is an SOT-23, a miniature low-profile surface-mount package, while package UA is a three-lead ultra mini SIP for through-hole mounting. Packages is Halogen Free standard and which have been verified by third party lab. Features and Benefits         DMOS Hall IC Technology. Reverse bias protection on power supply pin. Chopper stabilized amplifier stage. Optimized for BLDC motor applications. Reliable and low shifting on high Temp condition. Good ESD Protection. 100% tested at 125 ℃ for K. Custom sensitivity / Temperature selection are available. Applications            020415 High temperature Fan motor 3 phase BLDC motor application Speed sensing Position sensing Current sensing Revolution counting Solid-State Switch Linear Position Detection Angular Position Detection Proximity Detection High ESD Capability Page 1 of 4 Rev.0.01 MH180 Specifications Multi-Purpose Hall Effect Latch Ordering Information XXXXXXXXX - X Company Name and Product Category MH:MST Hall Effect/MP:MST Power IC Part number Sorting Code 181,182,183,184,185,248,249,276,477,381,381F,381R,382….. If part # is just 3 digits, the forth digit will be omitted. Package type Temperature range Temperature Code Part number E: 85 ℃, I: 105 ℃, K: 125 ℃, L: 150 ℃ Package type UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23, Company Name and Product Category SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin), SS:TSOT-26,SD:DFN-6 Sorting α,β,Blank….. Part No. MH180KUA MH180KSO MH180EUA Temperature Suffix K (-40℃ to + 125℃) K (-40℃ to + 125℃) E (-40℃ to + 85℃) Package Type UA (TO-92S) SO (SOT-23) UA (TO-92S) MH180ESO E (-40℃ to + 85℃) SO (SOT-23) KUA spec is using in industrial and automotive application. Special Hot Testing is utilized. Functional Diagram VDD Out Voltage Regulator Amp Hall Sensor GND 020415 Page 2 of 4 Rev.0.01 MH180 Specifications Multi-Purpose Hall Effect Latch Absolute Maximum Ratings At (Ta=25℃) Characteristics Supply voltage, (VDD) Output Voltage,(Vout) Reverse voltage, (VDD) Magnetic flux density Values 28 28 -28 Unlimited Unit V V V Gauss 50 mA -40 to +85 -40 to +125 -65 to +150 150 206 / 543 148 / 410 606 / 230 ℃ ℃ °C °C ℃/W ℃/W mW Output current, (Iout) “E” version “K” version Operating Temperature Range, (Ta) Storage temperature range, (Ts) Maximum Junction Temp,(Tj) Thermal Resistance (θja) UA / SO (θjc) UA / SO Package Power Dissipation, (PD) UA / SO Note: Do not apply reverse voltage to VDD and VOUT Pin, It may be caused for Miss function or damaged device. Electrical Specifications DC Operating Parameters： TA=+25℃, VDD=12V Parameters Test Conditions Min Typ 2.5 Max Units 24.0 5.0 400.0 10.0 V mA mV uA Supply Voltage,(VDD) Supply Current,(IDD) Output Saturation Voltage, (Vsat) Output Leakage Current, (Ioff) Operating Output Rise Time, (TR) RL=1.1KΩ, CL =20pF 0.04 0.45 uS Output Fall Time, (TF) RL=820Ω; CL =20pF 0.18 0.45 uS Electro-Static Discharge HBM Operate Point,(BOP) UA(SO) 45 Gauss Release Point,(BRP) UA(SO) -45 Gauss 90 Gauss BBOP IOFF B