TP44200SG
SUPERIOR GaN TP44200SG – 180mΩ, 650V GaN HEMT
1.0 Features
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650V, 180mΩenhancement mode power HEMT
Adapt to various PWM controllers
Zero reverse recovery
Adjustable turn-on slew rate
High switching frequency (>2MHz)
Reverse conduction capable
Enhanced thermal performance with NC center pad
Simple and low cost interface circuit
Direct PWM drive, no external VCC needed
(Top view)
(Bottom View)
Figure 1 Device Image
(22pin 5×7×0.85 mm QFN Package)
2.0 Topologies and Applications
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As switching FETs in singles, or in pairs as half-bridges
AC-DC, DC-DC, DC-AC converters
PFC applications (standard and totem-pole)
High frequency LLC converters
Mobile chargers and laptop adapters
LED and motor drives
Server power supplies
RoHS/REACH/Halogen Free
Compliance
3.0 Description
The SUPERIOR GaN TP44200SG is a 180mΩ, 650V GaN
power HEMT device. It can be directly driven from a standard
12V PWM controller, or the new generations of 6V PWM
controllers dedicated to GaN HEMT. No external VCC is
needed in either case. This device has low input/output
capacitances which allows switching at high frequency with
minimum loss. Due to its high breakdown voltage and high
reliability, it can be safely used to improve efficiency and
power density while bringing down overall system cost at the
same time. Its low inductance QFN package greatly helps to
minimize various ground bounce related issues. Provision
for controlled switching transition time helps reduce EMI very
effectively.
Figure 2 Functional Block Diagram
4.0 Ordering Information
Table 1 Ordering Information
Part
Number
Package Type
TP44200SG
22 Pin 5×7×0.8mm
QFN
Revision 1.1 - 2022-01-17
Form
Qty
Tape and
3000
Reel
Evaluation Board
Reel
Diameter
Reel
Width
Orderable
Part Number
13” (330mm)
18mm
TP44200SG
http://www.tagoretech.com
TP44200SG-EVB
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