NV6133A

NV6133A GaNFast™ Power IC with GaNSense™ Technology 1. Features GaNFast™ Power IC • • • • • • • • • Monolithically-integrated gate drive Wide VCC range (10 to 30 V) Programmable turn-on dV/dt 200 V/ns dV/dt immunity 800 V Transient Voltage Rating 700 V Continuous Voltage Rating Low 330 mΩ resistance Zero reverse recovery charge 2 MHz operation GaNSense™ Technology • • • • • QFN 6 x 8 mm Integrated loss-less current sensing Short-circuit protection Over-temperature protection Autonomous low-current standby mode Auto-standby mode input Simplified schematic 3. Description This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense™ technology is also integrated which enables real-time, accurate sensing of voltage, current and temperature to further improve performance and robustness not achieved by any discrete GaN or discrete silicon device. GaNSense™ enables integrated loss-less current sensing which eliminates external current sensing resistors and increases system efficiency. GaNSense™ also enables short circuit and over-temperature protection to increase system robustness, while auto-standby mode increases light, tiny & no-load efficiency. These GaN ICs combine the highest dV/dt immunity, high-speed integrated drive and industrystandard low-profile, low-inductance, SMT QFN packaging to enable designers to achieve simple, quick and reliable solutions. Navitas’ GaN IC technology extends the capabilities of traditional topologies such as flyback, half-bridge, buck/boost, LLC and other resonant converters to reach MHz+ frequencies with very high efficiencies and low EMI to achieve unprecedented power densities at a very attractive cost structure. Small, low-profile SMT QFN • 6 x 8 mm footprint, 0.85 mm profile • Minimized package inductance • Large cooling pad Sustainability • RoHS, Pb-free, REACH-compliant • Up to 40% energy savings vs Si solutions • System level 4kg CO2 Carbon Footprint reduction Product Reliability • 20-year limited product warranty (see Section 14 for details) 2. Topologies / Applications • AC-DC, DC-DC, DC-AC • High frequency operation up to 2 MHz • QR flyback, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D, PFC • Wireless power, Solar Micro-inverters • LED lighting, TV SMPS, Server, Telecom VIN 4. Typical Application Circuits VCC 30 RDD NC 9 to 24V VDD Loss-less Current Sensing VOUT+ S S S D VOUT- 23 1 S CS CSOUT SGND D D D NC SGND S D D 5V D D STBY S D 15 8 PWM S S S S S S D PGND HF QR Flyback Final Datasheet 1 Rev Oct. 11, 2022 NV6133A 5. Table of Contents 8.1. GaN Power IC Connections and Component Values ..................................................................... 13 1. Features ...................................................................1 2. Topologies / Applications ......................................1 8.2. UVLO Mode ..................................................... 15 3. Description ..............................................................1 8.3. Normal Operating Mode ................................... 16 4. Typical Application Circuits ..................................1 8.4. Low Power Standby Mode ............................... 17 5. Table of Contents ...................................................2 8.5. Programmable Turn-on dV/dt Control .............. 17 6. Specifications .........................................................3 8.6. GaNSenseTM Technology Loss-Less Current Sensing ................................................................... 18 6.1. Absolute Maximum Ratings(1) .............................3 6.2. Recommended Operating Conditions(3) ..............4 8.7. Over Current Protection (OCP) ........................ 19 6.3. ESD Ratings........................................................4 8.8. Over Temperature Protection (OTP)................ 20 6.4. Thermal Resistance ............................................4 8.9. Drain-to-Source Voltage Considerations ......... 21 6.5. Electrical Characteristics (1) ...............................5 9. PCB Layout Guidelines ....................................... 22 6.6. Electrical Characteristics (2, cont.) .....................6 10. Recommended PCB Land Pattern ................... 23 6.7. Electrical Characteristics (3, cont.) .....................7 11. Package Outline (Power QFN) .......................... 24 6.8. Switching Waveforms .........................................8 12. Tape and Reel Dimensions ............................... 25 6.9. Characteristic Graphs .........................................9 13. Ordering Information ......................................... 27 7. Pin Configurations and Functions ......................12 14. 20-Year Limited Product Warranty................... 27 8. Functional Description .........................................13 Final Datasheet 15. Revision History ................................................ 27 2 Rev Oct. 11, 2022 NV6133A 6. Specifications 6.1. Absolute Maximum Ratings(1) (with respect to Source (pad) unless noted) SYMBOL V MAX UNITS -7 to +700 V Transient Drain-to-Source Voltage(2) 800 V CC Supply Voltage 30 V DD DS (CONT) V DS (TRAN) V V PARAMETER Drain-to-Source Voltage Drive Supply Voltage 7 V R Input Voltage 7 V VSTBY Auto-Standby Mode Pin Voltage -0.6 to +20 or VCC V 6 V -0.6 to +20 or VCC V 5.3 V DD V5V V PWM V CS I 5 V Pin Voltage PWM Input Pin Voltage CS Pin Voltage D Continuous Drain Current (@ TC = 100ºC) 4 A I PULSE Pulsed Drain Current (10 µs @ TJ = 25ºC) 8 A 200 V/ns D dV/dt Slew Rate T J Junction Temperature -55 to 150 ºC STOR Storage Temperature -55 to 150 ºC T (1) Absolute maximum ratings are stress ratings; devices subjected to stresses beyond these ratings may cause permanent damage. (2) VDS (TRAN) allows for surge ratings during non-repetitive events that are