WP48007025

WP48007025 30W, 48V GaN HEMT Die Product Features Applications • Up to 7 GHz Operation • U/VHF Amplifiers • 14.0 dB Typical Small Signal Gain at 3.5 GHz • Broadband Amplifiers • 30 W Typical Psat at 5.8GHz • Base Station Communications • 48V Operation • Drone, UAV • High Breakdown Voltage • WiMAX, LTE, WCDMA, GSM • High Efficiency • WPT, V2X • Reliability Monitoring Supporting • Radar Application WP48007025 Absolute Maximum Rating (not simultaneous) at 25℃ Symbol Typical Value Units Conditions Threshold voltage @ Id=1mA/mm, Vd=10V Vto -3.4 V 25°C Breakdown voltage @ Id=1mA/mm VDG 160 V 25°C Drain-source current, Id @ Vd=10V, Vg=0 Idss 800 mA/mm 25°C Operating Junction Temperature TJ 225 °C Storage Temperature TSTG -65, +150 °C Thermal Resistance, Junction to Case (packaged) RθJC °C/W Thermal Resistance, Junction to Case (die only) RθJC °C/W Parameter Mounting Temperature (30 seconds) TS 320 °C 30 seconds DC Characteristics (Frequency= 3.5GHz unless otherwise stated; TA=25℃) Parameter Ohmic contact resistance Maximum Drain-source current, Id @ Vd=10V, Vg=1V (1X125μm device) Max. trans-conductance, @ Vd=10V, Vg=-4V ~ -1V (1X125μm device) Symbol Typical Value Units Conditions RC 0.3 Ohm-mm 25°C Idmax 1000 mA/mm 25°C GM_PEAK 290 mS/mm 25°C RF Characteristics (Frequency= 3.5GHz unless otherwise stated; TA=25℃) Symbol Typical Value Units Conditions Small Signal Gain GSS >12 dB VDD=48V, IDQ=250mA Saturated Power Output PSAT 30 W VDD=48V, IDQ=250mA η >60 % VDD=48V, IDQ=250mA Intermodulation Distortion IM3