WP28007025

WP28007025 25W, 28V GaN HEMT Die Product Features Applications • Up to 7 GHz Operation • ISM-band Amplifiers • 17.4 dB Typical Small Signal Gain at 2.45 GHz • C-band Amplifiers • 25 W Typical Psat at 2.45GHz • Broadband Amplifiers • 28V Operation • Base Station Communication • High Breakdown Voltage • Drone, UAV • High Efficiency • Satellite Communications • Reliability Monitoring Supporting • Radar Application WP28007025 Absolute Maximum Rating (not simultaneous) at 25℃ Symbol Typical Value Units Conditions Threshold voltage @ Id=1mA/mm, Vd=10V Vto -3.4 V 25°C Breakdown voltage @ Id=1mA/mm VDG 160 V 25°C Drain-source current, Id @ Vd=10V, Vg=0 Idss 800 mA/mm 25°C Operating Junction Temperature TJ 225 °C Storage Temperature TSTG -65, +150 °C Thermal Resistance, Junction to Case (packaged) RθJC °C/W Thermal Resistance, Junction to Case (die only) RθJC °C/W Parameter Mounting Temperature (30 seconds) TS 320 °C 30 seconds DC Characteristics (Frequency= 2.45GHz unless otherwise stated; TA=25℃) Parameter Ohmic contact resistance Maximum Drain-source current, Id @ Vd=10V, Vg=1V (1X125μm device) Max. trans-conductance, @ Vd=10V, Vg=-4V ~ -1V (1X125μm device) Symbol Typical Value Units Conditions RC 0.3 Ohm-mm 25°C Idmax 1000 mA/mm 25°C GM_PEAK 290 mS/mm 25°C RF Characteristics (Frequency= 2.45GHz unless otherwise stated; TA=25℃) Symbol Typical Value Units Conditions Small Signal Gain GSS >17 dB VDD=28V, IDQ=100mA Saturated Power Output PSAT 25 W VDD=28V, IDQ=100mA η >70 % VDD=28V, IDQ=100mA Intermodulation Distortion IM3