2N5301

Bipolar Transistor NPN Collector 3 2 Base 1 Emitter Features: •  High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA •  Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A Description: High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Rating Unit 40 V Continuous Collector Current lC 30 Base Current IB 7.5 Total Device Dissipation (TC = +25°C) Derate Above 25°C PD 200 1.14 W mW/°C Operating Junction Temperature Range TJ Storage Temperature Range Tstg -65 to +200 °C A www.element14.com www.farnell.com www.newark.com Page 23/04/13 V1.0 Bipolar Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min. Max. Unit V(BR)CEO IC = 200mA, IB = 0 (Note 1) 40 - V ICEO VCB = 40V, IB = 0 ICEX VCE = 40V, VEB(off) = 1.5V ICBO VCB = 40V, IE = 0 IEBO VEB = 5V, IC = 0 OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current 5 - 1 mA 5 ON Characteristics DC Current Gain (Note 1) Collector - Emitter Saturation Voltage hFE VCE(sat) VCE = 2V, IC = 1A 40 - VCE = 2V, IC = 15A 15 60 VCE = 4V, IC = 30A 5 - IC = 10A, IB = 1A 0.75 IC = 20A, IB = 2A 2 IC = 30A, IB = 6A 3 IC = 10A, IB = 1A Base - Emitter Saturation Voltage Base - Emitter Saturation Voltage VBE(sat) IC = 15A, IB = 1.5A VBE(on) - 1.7 1.8 IC = 20A, IB = 2A 2.5 IC =15A, VCE = 2V 1.7 IC =30A, VCE = 4V 3 - V Small Signal Characteristics Current Gain-Bandwidth Product (Note 2) fT VCE = 10V, IC = 1A, f = 1MHz 2 Small-Signal Current Gain hfe VCE = 10V, IC = 1A, f = 1kHz 40 Rise Time tr VCC = 30V, IC = 10A, IB1 = 1A Storage Time ts Fall Time tf - MHz - Switching Characteristics VCC = 30V, IC = 10A, IB1 = IB2 = 1A 1 - 2 us 1 Note 1 : Pulse Test : Pulse Width % 300µs, Duty Cycle % 2% Note 2 : fT is defined as the frequency at which |hfe| extrapolates to unity www.element14.com www.farnell.com www.newark.com Page 23/04/13 V1.0 Bipolar Transistor Dimensions Collector 3 2 Base 1 Emitter Min. Max. A 38.75 39.96 B 19.28 22.23 C 7.96 D 11.18 12.19 E 25.2 26.67 F 0.92 1.09 G 1.38 1.62 H 29.9 30.4 I 16.64 17.3 J 3.88 4.36 K 10.67 11.18 9.23 Dimensions : Millimetres Part Number Table Description Part Number Transistor, NPN, 30A, 40V, TO-3 2N5301 Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page 23/04/13 V1.0