GC2X10MPS12-247

GC2X10MPS12-247 1200 V SiC MPS™ Diode VRRM IF (Tc = 135°C) C) QC Silicon Carbide Schottky Diode Features = = = 1200 V 48 A* 80 nC* Package  High Avalanche (UIS) Capability  Enhanced Surge Current Capability  Superior Figure of Merit QC/IF  Low Thermal Resistance  175 °C Maximum Operating Temperature  Temperature Independent Switching Behavior  Positive Temperature Coefficient of VF  Extremely Fast Switching Speeds Case Case A A K TO-247-3 A K A Advantages Applications  Low Standby Power Losses  Improved Circuit Efficiency (Lower Overall Cost)  Low Switching Losses  Ease of Paralleling without Thermal Runaway  Smaller Heat Sink Requirements  Low Reverse Recovery Current  Low Device Capacitance  Low Reverse Leakage Current  Boost Diode in Power Factor Correction (PFC)  Switched Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Motor Drives  Freewheeling / Anti-parallel parallel Diode in Inverters  Solar Inverters  LED and HID Lighting  AC-DC DC Converters & Auxiliary Power Supplies Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated) Parameter Symbol Repetitive Peak Reverse Voltage (Per Leg) Continuous Forward Current (Per Leg / Per Device) VRRM IF Non-Repetitive Peak Forward Surge Current, Half Sine Wave (Per Leg) IF,SM Repetitive Peak Forward Surge Current, Half Sine Wave (Per Leg) IF,RM Non-Repetitive Peak Forward Surge Current (Per Leg) IF,max 2 Non-Repetitive Avalanche Energy (Per Leg) Diode Ruggedness (Per Leg) Power Dissipation (Per Leg / Per Device) Operating and Storage Temperature Aug 2018 Rev1.2 Values Unit 1200 V TC = 25 °C, D = 1 50/100 TC = 135 °C, D = 1 24/48 TC = 166 °C, D = 1 10/20 TC = 25 °C, tP = 10 ms 82 TC = 150 °C, tP = 10 ms 66 A A TC = 25 °C, tP = 10 ms 50 TC = 150 °C, tP = 10 ms 34 TC = 25 °C, tP = 10 µs 780 A ∫i dt TC = 25 °C, tP = 10 ms 34 As EAS L = 2.2 mH, IAS = 10 A 110 10 mJ dV/dt VR = 0 ~ 960 V 100 V/ns Ptot TC = 25 °C 336/672 W -55 55 to 175 °C 2 i t Value (Per Leg) Conditions Tj , Tstg www.genesicsemi.com/schottky_mps/GC2X10MPS12 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf A 2 Page 1 of 7 GC2X10MPS12-247 1200 V SiC MPS™ Diode Electrical Characteristics (Per Leg) Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time ts Total Capacitance C Conditions Values Typ.. Max. IF = 10 A, Tj = 25 °C 1.5 1.8 IF = 10 A, Tj = 175 °C 2 2.4 VR = 1200 V, Tj = 25 °C 1 10 VR = 1200 V, Tj = 175 °C 3 36 IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C Min. VR = 400 V 27 VR = 800 V 40 VR = 400 V VR = 800 V < 10 VR = 1 V, f = 1 MHz, Tj = 25 °C 660 VR = 800 V, f = 1 MHz, Tj = 25 °C 50 Unit V µA nC ns pF Thermal / Mechanical Characteristics Thermal Resistance, Junction – Case (Per Leg) Weight Mounting Torque RthJC 0.38 °C/W WT 6.1 g TM 1.1 Nm * Per Device Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC2X10MPS12 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 2 of 7 GC2X10MPS12-247 1200 V SiC MPS™ Diode IF = f(VF,Tj); tP = 10 µs IF = f(VF,Tj); tP = 10 1 µs Figure 1: Typical Forward Characteristics (Per Leg) Figure 2: Typical High Current Forward Characteristics (Per Leg) IR = f(VR,Tj) Ptot = f(Tc) Figure 3: Typical Reverse Characteristics (Per Leg) Figure 4: Power Derating Curve (Per Leg) Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC2X10MPS12 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 3 of 7 GC2X10MPS12-247 1200 V SiC MPS™ Diode IF = f(TC); D = tP/T, tP= 10 µs C = f(VR); Tj = 25 °C;; f = 1 MHz Figure 5: Current Derating Curves (Per Leg) Figure 6: Typical Junction Capacitance vs. vs Reverse Voltage Characteristics (Per Leg) Qc = f(VR); Tj = 25 °C; f = 1 MHz EC = f(VR); Tj = 25 °C; f = 1 MHz Figure 7: Typical Capacitive Charge vs. Reverse Voltage Characteristics (Per Leg) Figure 8: Typical Capacitive Energy vs. Reverse Voltage Characteristics (Per Leg) Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC2X10MPS12 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 4 of 7 GC2X10MPS12-247 1200 V SiC MPS™ Diode Zth,jc = f(tP,D); D = tP/T Figure 9: Transient Thermal Impedance (Per Leg) IF = (VF – VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m*Tj + n (V), (V) m = -1.55e-03, 03, n = 1.01 Differential Resistance (RDIFF): 2 RDIFF(Tj) = a*Tj + b*Tj + c (Ω); a = 1.26e-06, b = 2.11e-04, 04, c = 0.0447 IF = f(VF, Tj) Figure 10:: Forward Curve Model (Per Leg) Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC2X10MPS12 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 5 of 7 GC2X10MPS12-247 1200 V SiC MPS™ Diode Package Dimensions TO-247-3L Package Outline Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GC2X10MPS12 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 6 of 7 GC2X10MPS12-247 1200 V SiC MPS™ Diode RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive e 2011/65/EC (RoHS (RoHS), as implemented November 15, 2017.. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up--to-date REACh SVHC Declaration. REACh banned substance information ((REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications applicatio implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support life machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, lice express or implied to any intellectual property rights is granted by this document. Related Links    Soldering Document: http://www.genesicsemi.com/ http://www.genesicsemi.com/technical-support/quality/ Tin-Whisker Report: http://www.genesicsemi.com/ http://www.genesicsemi.com/technical-support/compliance/ Reliability Report: http://www.genesicsemi.com/ http://www.genesicsemi.com/technical-support/reliability/ Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Aug 2018 Rev1.2 Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 Page 7 of 7