HA20N60

HA20N60 600V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability BVDSS = 600 V RDS(on) typ= 0.34 Ω APPLICATIONS  Switch Mode Power Supply (SMPS) 1 ID = 20 A 2 3 1.Gate 2. Drain 3. Source  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking HA20N60 TO-3P HA20N60 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO-3P Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage VDSS 600 V ID 20 A IDM 80 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 1350 mJ Avalanche Current (note1) IAR 16 A Repetitive Avalanche Energy (note1) EAR 90 mJ PD 120 W TJ, Tstg -55~+150 C º Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Value Parameter Symbol Unit TO-3P Thermal Resistance, Junction-to-Case RthJC 1.04 Thermal Resistance, Junction-to-Ambient RthJA 62.5 1 ºC/W V1.1 HA20N60 Specifications TJ = 25ºC , unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 600 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 10A -- 0.34 0.40 Ω -- 2978 -- -- 291 -- -- 40 -- -- 80 -- -- 12 -- Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 34 -- Turn-on Delay Time td(on) -- 37 -- Turn-on Rise Time tr -- 66 -- Turn-off Delay Time td(off) -- 175 -- -- 84 -- -- -- 20 -- -- 80 -- -- 1.4 V -- 450 -- ns -- 7.1 -- μC Turn-off Fall Time VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 480V, ID = 20A, VGS = 10V VDD = 250V, ID = 20A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TC = 25 ºC TJ = 25ºC, ISD = 20A, VGS = 0V VGS = 0V,IS = 20A, diF/dt =100A /μs A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 16A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 C º 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 2 V1.1 HA20N60 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage 102 20V 10V 8V 7V 6V 5V 20 15 IS, Source Current (A) ID, Drain Current (A) 25 10 5 0 TJ = 150ºC 101 TJ = 25ºC 100 10-1 0 2 4 6 8 10 12 0.2 VDS, Drain-to-Source Voltage (V) 1.2 1.4 VGS = 0V ID=250uA 1.15 20 BVDSS (Normalized) ID, Drain Current (A) 1 1.2 15 10 5 0 30 60 90 120 1.1 1.05 1 0.95 0.9 150 -50 TC, Case Temperature (A) Figure 5. Transfer Characteristics TJ = 25ºC 15 TJ = 150ºC 10 5 0 2 4 6 0 25 50 75 100 125 150 Figure 6. On-Resistance vs. Temperature RDS(on), On-Resistance (Normalized) 20 -25 TC, Case Temperature (ºC) 25 ID, Drain Current (A) 0.8 Figure 4. BVDSS Variation vs. Temperature 25 0 0.6 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature 0 0.4 8 10 VGS, Gate-to-Source Voltage (V) 3 VGS = 10V ID=10A 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 TJ, Junction Temperature (ºC) 3 V1.1 HA20N60 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 12 VGS, Gate-to-Source Voltage (V) 104 Capacitance (pF) Ciss 103 Coss 102 Crss VGS = 0V f = 1MHz 101 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) VDD = 120V 10 VDD = 300V 8 VDD = 480V 6 4 2 0 0 20 40 60 80 100 Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance TO-220F ZthJC, Thermal Impedance (ºC/W) 101 100 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) V1.1 HA20N60 Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform 5 V1.1 HA20N60 TO-3P 4.8±0.20 ±0 .2 φ3 .20 1.5±0.20 18.7±0.20 13.9±0.20 14.9±0.20 19.9±0.20 15.6±0.20 13.6±0.20 9.6±0.20 3.5±0.20 3±0.20 2±0.20 1±0.20 16.5±0.20 1.4±0.20 0.6±0.20 5.45typ 5.45typ 6 V1.1