HB3710P

HB3710P,HP3710P 100V N-Channel MOSFET FEATURES  TO-263 Fast switching TO-220  100% avalanche tested  Improved dv/dt capability 1 2 3 1 2 3 1.Gate 2. Drain 3. Source APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO-220,TO-263 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage VDSS 100 V ID 70 A IDM Figure 6 A VGSS ±20 V Single Pulse Avalanche Energy (note2) EAS 1943 mJ Avalanche Current (note1) IAR 32 A Repetitive Avalanche Energy (note1) EAR 36 mJ PD 200 W TJ, Tstg -55 to175 ºC Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Value Parameter Symbol Unit TO-220,TO-263 Thermal Resistance, Junction-to-Case RthJC 0.75 Thermal Resistance, Junction-to-Ambient RthJA 62 . 1 ℃/W V3.1 HB3710P,HP3710P Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- VDS = 100V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 80V, VGS = 0V, TJ = 125ºC -- -- 100 VGS = +20V,VDS=0V -- -- 100 VGS=-20V, VDS=0V -- -- -100 Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage V μA nA IGSS Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 35A -- 15 20 mΩ gfs VDS = 10V, ID = 35A Forward Transconductance S 85 Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz -- 2700 -- -- 610 -- Output Capacitance Coss Reverse Transfer Capacitance Crss -- 260 -- Total Gate Charge Qg -- 105 -- Gate-Source Charge Qgs -- 15 -- Gate-Drain Charge Qgd -- 45 -- Turn-on Delay Time td(on) -- 20 -- -- 28 -- -- 65 -- -- 15 -- -- -- 57 -- -- 230 Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VDD =50V, ID = 35A, VGS = 0 to 10V VDD = 50V, ID =35A, VGS= 10V RG = 2.5 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 35A, VGS = 0V -- -- 1.5 V Reverse Recovery Time trr -- 195 -- ns Reverse Recovery Charge Qrr VGS = 0V,IS = 28A, diF/dt =100A /μs -- 107 -- μC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% . 2 V3.1 HB3710P,HP3710P Typical Characteristics TJ = 25ºC, unless otherwise noted 3 V3.1 HB3710P,HP3710P Typical Characteristics TJ = 25ºC, unless otherwise noted 4 V3.1 HB3710P,HP3710P Typical Characteristics TJ = 25ºC, unless otherwise noted . 5 V3.1 HB3710P,HP3710P Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform 6 V3.1 HB3510P,HP3510P TO-263 7 V3.0 HB3510P,HP3510P TO-220 ±0.20 84 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 4.57±0.20 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 8 V3.0