HD60P03

HD60P03 / HU60P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 60P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate BVDSS = -30V voltages as low as 4.5V. RDS(on) typ =13 m Ω GENERAL FEATURES ID = -50 A ● VDS = -30V,ID = -20A RDS(ON) < 30mΩ @ VGS=-4.5V TO-252 TO-251 2 RDS(ON) < 17mΩ @ VGS=-10V 1 1 2 3 3 HD60P03 ● High Power and current handing capability HU60P03 1.Gate 2. Drain 3. Source ● Lead free product is acquired D ● Surface Mount Package G Application ●Battery Switch ●Load switch S ●Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Unit -30 V ±20 V -50 TC =25℃ ID Continuous Drain Current (TJ =150℃) TC =100℃ Drain Limit -35 IDM -50 A PD 60 W TJ,TSTG -55 To 150 ℃ RθJA 2.5 ℃/W Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range A Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Electrical Characteristics (TA=25℃unless otherwise noted) Page 1 v1.0 HD60P03 / HU60P03 Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.5 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-15A - 13 17 mΩ VGS=-4.5V, ID=-10A - 20 30 mΩ 10 - - S - 1700 - PF - 258 - PF - 108 - PF - 10 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS VDS=-5V,I D=-10A Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V, ID=-1A, - 26 - nS td(off) VGS=-10V,RGEN=6Ω - 35 - nS 8 - nS - 30 - nC - 6 - nC - 9 - nC - - -1.2 V Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V,ID=-10A VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,I S =-10A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page 2 v1.0 HD60P03 / HU60P03 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 3 Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS Page 3 Figure 6 Drain-Source On-Resistance v1.0 ID- Drain Current (A) Normalized On-Resistance HD60P03 / HU60P03 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward Page 4 v1.0 ID- Drain Current (A) HD60P03 / HU60P03 Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Page 5 v1.0 HD60P03_HU60P03 Package Dimension {vT {v TY\Y 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 0.5+0.1 -0.05 2.3typ 2 3typ 2.3typ Page 6 v1.0 HD60P03 / HU60P03 Package Dimension {vT {v TY\Y Page 7 v1.0 HD60N03_HU60N03 Package Dimension {vT {v TY\X 6.6±0.2 2.3±0.1 0.8±0.15 ·WU[ · ^U_±0 0.3 7.5 0.75±0.15 7±0.2 0.5±0.05 5.6±0.2 5.35±0.15 0.5+0.1 -0.05 0.6±0.1 2.3typ 1.2±0.3 2 3typ 2.3typ Page 8 v1.0