HF10N80

HF10N80 800V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking HF10N80 TO-220F HF10N80 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO-220F Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage VDSS 800 V ID 10 A IDM 38 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 281 mJ Avalanche Current (note1) IAR 7.5 A Repetitive Avalanche Energy (note1) EAR 45 mJ PD 65 W TJ, Tstg -55~+150 C º Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Value Parameter Symbol Unit TO-220F Thermal Resistance, Junction-to-Case RthJC 1.92 Thermal Resistance, Junction-to-Ambient RthJA 62.5 . 1 ºC/W V3.0 HF10N80 Specifications TJ = 25ºC , unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 800 -- -- VDS = 800V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 640V, VGS = 0V, TJ = 125ºC -- -- 100 Static Drain-Source Breakdown Voltage V(BR)DSS V Zero Gate Voltage Drain Current IDSS Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, VDS = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 5.0A -- 0.8 1.0 Ω -- 1979 -- -- 133 -- -- 53 -- -- 83 -- -- 9 -- μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 640V, ID = 10.0A, VGS = 10V pF Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 49 -- Turn-on Delay Time td(on) -- 23 -- Turn-on Rise Time tr -- 15 -- Turn-off Delay Time td(off) -- 90 -- -- 30 -- -- -- 10 -- -- 38 -- -- 1.4 V -- 320 -- ns -- 4.2 -- μC Turn-off Fall Time VDD = 400V, ID =10.0A, RG = 25 Ω tf nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TC = 25 ºC TJ = 25ºC, ISD = 10.0A, VGS = 0V VGS = 0V,IS = 10.0A, diF/dt =100A /μs A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 C º 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 2 V3.0 HF10N80 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) 102 20V 10V 8V 7V 6V 5V 10 8 IS, Source Current (A) ID, Drain Current (A) 12 Figure 2. Body Diode Forward Voltage 6 4 TJ = 150ºC 101 TJ = 25ºC 100 2 10-1 0.2 0 4 8 12 16 20 VDS, Drain-to-Source Voltage (V) 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature Figure 4. BVDSS Variation vs. Temperature 12 1.2 VGS = 0V ID = 250 μA 10 BVDSS (Normalized) ID, Drain Current (A) 0 8 6 4 1.1 1 2 0 25 50 75 100 125 0.9 150 -50 TJ, Case Temperature (ºC) Figure 5. Transfer Characteristics RDS(on), On-Resistance (Normalized) ID, Drain Current (A) 7 6 TJ = 150ºC 4 3 2 1 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) . 100 150 Figure 6. On-Resistance vs. Temperature TJ = 25ºC 5 50 TJ, Junction Temperature (ºC) 9 8 0 3 VGS = 10V ID = 5A 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 TJ, Junction Temperature (ºC) 3 V3.0 HF10N80 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 10 VGS, Gate-to-Source Voltage (V) Capacitance (pF) 104 Ciss 103 Coss 102 Crss VGS = 0V f = 1MHz 101 0 10 20 30 40 50 VDD = 160V 8 VDS, Drain-to-Source Voltage (V) VDD = 640V 6 4 2 0 60 VDD =400V 0 20 40 60 80 Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance ZthJC, Thermal Impedance (K/W) 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 V3.0 HF10N80 Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform 5 V3.0 HF10N80 TO-220F 6 V3.0