HL20N04

HL20N04 N-Channel Trench Power MOSFET General Description SOT-89-3L The HL20N04 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. 1.GATE Features 2. DRAIN ● VDS = 40V,ID =20A RDS(ON) < 20mΩ @ VGS =10V RDS(ON) < 34mΩ @ VGS =4.5V 3. SOURCE ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management Schematic Diagram 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking HL20N04 Device Device Package HL20N04 SOT-89 Quantity 1000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 40 V ±20 V Drain Current-Continuous(Tc=25℃) 20 A Drain Current-Continuous(Tc=100℃) 21 A 120 A Maximum Power Dissipation(Tc=25℃) 38 W Maximum Power Dissipation(Tc=100℃) 19 W 100 mJ -55 To 175 ℃ Value Unit 4 ℃/W VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) PD EAS TJ,TSTG Avalanche energy Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol RJC (Note 2) Parameter Thermal Resistance,Junction-to-Case -1- V2.0 HL20N04 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 3 V VGS(th) gFS RDS(ON) Forward Transconductance Drain-Source On-State Resistance 40 1 V 2 VDS=5V,ID=10A 18 S VGS=10V, ID=20A 14 20 mΩ VGS=4.5V, ID=15A 24 34 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 840 pF 92 pF 60 pF 2.7 Ω 5 nS 12 nS Turn-Off Delay Time 20 nS tf Turn-Off Fall Time 4.5 nS Qg Total Gate Charge 20 nC Qgs Gate-Source Charge 2.5 nC Qgd Gate-Drain Charge 4.5 nC VDS=25V,VGS=0V, f=1.0MHz VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3 VGS=10V, VDS=15V, ID=20A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A 20 A 1.2 V trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/s 7 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 5 nC Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 2.EAS condition: TJ=25℃ ,VDD=15V,VG=10V, RG=25Ω -2- V2.0 HL20N04 Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： -3- V2.0 HL20N04 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Id (A) Figure 2. Transfer Characteristics Id (A) Figure 1. Output Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 4. Drain Current Id (A) Normalized BVDSS Figure 3. Max BVDSS vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 6. RDS(ON) vs Junction Temperature Normalized Vth Normalized Rdson Figure 5. VGS(th) vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) -4- V2.0 HL20N04 Figure 8. Capacitance Vgs (V) C Capacitance(pF) Figure 7. Gate Charge Waveforms Qg(nC) VDS Drain-to-Source Voltage(V) Figure 10. Maximum Safe Operating Area Is (A) Id (A) Figure 9. Body-Diode Characteristics Vsd (V) VDS Drain-to-Source Voltage(V) Figure 11. Normalized Maximum Transient Thermal Impedance -5- V2.0 HL20N04 TO-89 Package Information Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 -6- Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 V2.0