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HF20N50

HF20N50

  • 厂商:

    HL(豪林)

  • 封装:

    TO-220F-3

  • 描述:

    类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):98W;导通电阻(RDS(on)@Vgs,Id):340mΩ@10V,10A;阈值电压(Vgs(th)@Id)...

  • 数据手册
  • 价格&库存
HF20N50 数据手册
HF20N50,HP20N50 500V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Symbol Value Unit VDSS 500 V ID 20 A IDM 72 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 980 mJ Avalanche Current (note1) IAR 14 A Repetitive Avalanche Energy (note1) EAR 64 mJ PD 98 W TJ, Tstg -55~+150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 1.27 Thermal Resistance, Junction-to-Ambient RthJA 62.5 Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Parameter K/W 1 V3.0 HF20N50,HP20N50 Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 500 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 10A -- 0.28 0.34 Ω -- 2250 -- -- 231 -- -- 36 -- -- 71 -- -- 10 -- Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 25V, f = 1.0MHz VDD =400V, ID = 20A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 32 -- Turn-on Delay Time td(on) -- 35 -- Turn-on Rise Time tr -- 50 -- Turn-off Delay Time td(off) -- 180 -- -- 65 -- -- -- 18 -- -- 72 Turn-off Fall Time VDD = 250V, ID =20A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.4 V Reverse Recovery Time trr -- 430 -- ns Reverse Recovery Charge Qrr VGS = 0V,IS = 18A, diF/dt =100A /μs -- 6.5 -- μC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 14A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 250μs, Duty Cycle ≤ 1% 2 V3.0 HF20N50,HP20N50 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage 35 102 ID, Drain Current (A) 25 20 IS, Source Current (A) 20V 10V 8V 7V 6V 5V 30 15 10 5 0 0 4 8 12 16 TJ = 150ºC 101 TJ = 25ºC 100 10-1 20 0.2 VDS, Drain-to-Source Voltage (V) 0.8 1 1.2 1.4 Figure 4. BVDSS Variation vs. Temperature 20 1.2 VGS = 0V ID=250uA 1.15 16 BVDSS (Normalized) ID, Drain Current (A) 0.6 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature 12 8 4 1.1 1.05 1 0.95 0 0 30 60 90 120 0.9 150 -50 TC, Case Temperature (A) RDS(on), On-Resistance (Normalized) TJ = 25ºC 16 12 TJ = 150ºC 8 4 0 0 2 4 6 0 25 50 75 100 125 150 Figure 6. On-Resistance vs. Temperature 24 20 -25 TC, Case Temperature (ºC) Figure 5. Transfer Characteristics ID, Drain Current (A) 0.4 8 10 3 VGS = 10V ID= 9A 2.5 2 1.5 1 0.5 0 -75 VGS, Gate-to-Source Voltage (V) -25 25 75 125 TJ, Junction Temperature (ºC) 3 V3.0 HF20N50,HP20N50 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 12 VGS, Gate-to-Source Voltage (V) Capacitance (pF) 104 Ciss 103 102 Coss 101 Crss VGS = 0V f = 1MHz 100 0 10 20 30 40 VDD = 100V 10 VDD = 250V 8 VDD = 400V 6 4 2 0 50 0 VDS, Drain-to-Source Voltage (V) 20 40 60 80 Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance TO-220F ZthJC, Thermal Impedance (ºC/W) 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 V3.0 HF20N50,HP20N50 Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform 5 V3.0 HF20N50,HP20N50 TO-220F 6 V3.0 HF20N50,HP20N50 TO-220
HF20N50 价格&库存

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