HP8N60

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-220F/TO-220 Plastic-Encapsulate Transistors 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter HF8N60M Drain to Source Voltage HP8N60 600 Units V Continuous Drain Current(@TC = 25°C) 7.5 7.5* A Continuous Drain Current(@TC = 100°C) 4.5 4.5* A 30 30* A Drain (Note 1) Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy 2) Repetitive (Note 1) Peak Diode (Note 3) (Note Avalanche Energy Recovery dv/dt Total Power Dissipation(@TC = 25 °C) 165 Derating Factor above 25 °C 1.21 Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. ±30 V 285 mJ 15.5 mJ 4.5 V/ns 55 0.4 W W/°C -55 ~ 150 °C 300 °C Thermal Characteristics Symbol 1/7 Parameter HHF8N60 HHP8N60 Units RθJC Thermal Resistance, Junction-to-Case 0.85 2.2 °C/W RθCS Thermal Resistance, Case-to-Sink Typ 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W HP8N60/HF8N60 Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Δ BVDSS /Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -- 0.57 VDS = 600V, VGS = 0V -- -- 10 uA VDS = 480V, TC = 125 °C -- -- 100 uA Gate-Source Leakage, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-source Leakage, Reverse VGS = -30V, VDS = 0V -- -- -100 nA IDSS IGSS Drain-Source Leakage Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-state Resistance VGS =10 V, ID = 3.75A -- 0.85 1.2 Ω -- 1255 -- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz -- 115 -- -- 14.2 -- -- 22 -- -- 90 -- -- 76 -- -- 44 -- -- 30 -- -- 5.2 -- -- 16.3 -- pF Dynamic Characteristics td(on) tr td(off) tf Qg Turn-on Delay Time Rise Time VDD =300V, ID =7.5A, RG =25Ω Turn-off Delay Time (Note 4, 5) Fall Time Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =7.5A (Note 4, 5) ns nC Source-Drain Diode Ratings and Characteristics Min. Typ. Max. Continuous Source Current Integral Reverse p-n Junction -- -- 7.5 ISM Pulsed Source Current Diode in the MOSFET -- -- 30 VSD Diode Forward Voltage IS=7.5A, VGS =0V -- -- 1.5 V trr Reverse Recovery Time IS=7.5A, VGS=0V,dIF/dt=100A/us -- 390 -- ns Qrr Reverse Recovery Charge IS=7.5A, VGS=0V,dIF/dt=100A/us -- 3.3 -- uC Symbol IS Parameter Test Conditions ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 20mH, IAS =7.5A, VDD = 50V, RG = 50Ω , Starting TJ = 25°C 3. ISD ≤ 7.5A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature 2/7 Unit. A HP8N60/HF8N60 3/7 HP8N60/HF8N60 4/7 HP8N60/HF8N60 5/7 HP8N60/HF8N60 6/7 HP8N60/HF8N60 7/7