A733 T

SHENZHEN HAOLIN ELECTRONIC S TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 A733 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURE Power dissipation 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 ℃ Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -50uA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V Collector cut-off current ICBO VCB= -60V, IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 uA DC current gain hFE VCE= -6V, IC= -1mA Collector-emitter saturation voltage VCE(sat) 90 IC= -100mA, IB=- 10mA Base-emitter voltage VBE VCE=-6V,IC=-1.0mA -0.58 Transition frequency fT VCE=-6V,IC=-10mA 100 Collector output capacitance Cob Noise figure NF VCB=-10V,IE=0,f=1MHZ VCE=-6V,IC=-0.3mA, Rg=10kΩ,f=100HZ 200 600 -0.18 -0.3 V -0.62 -0.68 V MHz 6 pF 20 dB CLASSIFICATION OF hFE Rank Range R Q P K 90-180 135-270 200-400 300-600