HD60N08(AGF)

BVDSS = 80V RDS(on) = 13 mΩ HD60N08 / HU60N08 ID = 60 A 80V N-Channel MOSFET TO-252 TO-251 FEATURES  Originative New Design HD60N75  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HU60N75 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.013 Ω (Typ.) @V GS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 80 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 60 A Drain Current – Continuous (TC = 100℃) 41 A IDM Drain Current – Pulsed 100 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 290 mJ IAR Avalanche Current (Note 1) 60 A EAR Repetitive Avalanche Energy (Note 1) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TA = 25℃)* 3.75 W Power Dissipation (TC = 25℃) - Derate above 25℃ 85 W 0.8 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 1.0 RθJA Junction-to-Ambient* -- 40 RθJA Junction-to-Ambient -- 62.5 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) 1/6 HD60N08_HU60N08 Nov 2009 HD60N08 / HU60N08 80VDS／±25VGS／80A(ID) N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET2 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 80 - - V Zero Gate Voltage Drain Current IDSS VDS=80V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A - 13 16 mΩ gFS VDS=5V,ID=40A 30 - - S - 2498 - PF - 185 - PF - 80 - PF - 12 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V,ID=2A,RL=1Ω - 5.2 - nS td(off) VGS=10V,RGEN=3Ω - 38 - nS - 27 - nS - 36 - nC - 9.9 - nC - 6.6 - nC - - 1.2 V - - 90 A - 35 nS - 47 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=40A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time VGS=0V,IS=40A VSD IS trr Reverse Recovery Charge Qrr Forward Turn-On Time ton TJ = 25°C, IF =40A di/dt = 100A/μs (Note3) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω 2/7 HD60N08 / HU60N08 Test circuit 1) EAS test Circuits 2) Gate charge test Circuit 3) Switch Time Test Circuit 3/7 HD60N08 / HU60N08 ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward 4/7 Power Dissipation (W) C Capacitance (pF) HD60N08 / HU60N085 TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 9 Power De-rating ID- Drain Current (A) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 ID Current- JunctionTemperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance 5/7 HD60N80_HU60N80 Package Dimension TO TO-252 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 5.35±0.15 1±0.2 6 2.3±0.1 6.6±0.2 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 0.5+0.1 -0.05 2.3typ 2 3typ 2.3typ 6/7 HD60N80_HU60N80 Package Dimension TO TO-251 6.6±0.2 0.6±0.1 2.3typ 7.8±0 ±0.4 ± 0.3 7.5 0.8±0.15 7±0.2 0.5±0.05 5.6±0.2 5.35±0.15 0.75±0.15 777 2.3±0.1 0.5+0.1 -0.05 1.2±0.3 2 3typ 2.3typ 7/7