HD80N03

HD80N03 N-Channel Trench Power MOSFET General Description The HD80N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =70A RDS(ON) < 6.5 mΩ @ VGS =10V RDS(ON) < 8.5 mΩ @ VGS =5V Schematic Diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● ● ● PWM applications Load switch Power management TO-252(DPAK) top view 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity HD80N03 HD80N03 TO-252 325mm 16mm 2500 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 30 V ±20 V 70 A 49 A 230 A Maximum Power Dissipation(Tc=25℃) 65 W Maximum Power Dissipation(Tc=100℃) 32.5 W 90 mJ -55 To 175 ℃ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) ID Drain Current-Continuous(Tc=100℃) IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol Parameter RJC Thermal Resistance,Junction-to-Case -1- Typ Max Unit - 2 ℃/W 2021-10-11 V1.2 HD80N03 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.5 2.5 V VDS=5V,ID=20A 10 20 VGS(th) gFS RDS(ON) Forward Transconductance Drain-Source On-State Resistance 30 V S VGS=10V, ID=20A 5 6.5 mΩ VGS=5V, ID=15A 6.5 8.5 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2200 pF 312 pF 195 pF 2 Ω 7 nS 22 nS Turn-Off Delay Time 30 nS tf Turn-Off Fall Time 5 nS Qg Total Gate Charge 47 nC Qgs Gate-Source Charge 8 nC Qgd Gate-Drain Charge 9 nC VDS=15V,VGS=0V, f=1.0MHz VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3 VGS=10V, VDS=25V, ID=12A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A 70 A 1.2 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=30V,VG=10V, RG=25Ω -2- 2021-10-11 V1.2 HD80N03 Test Circuit 1) EAS Test Circuits 7.2 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： -3- 2021-10-11 V1.2 HD80N03 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Id (A) Figure 2. Transfer Characteristics Id (A) Figure 1. Output Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 4. Drain Current Id (A) Normalized BVDSS Figure 3. Max BVDSS vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 6. RDS(ON) vs Junction Temperature Normalized Vth Normalized Rdson Figure 5. VGS(th) vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) -4- 2021-10-11 V1.2 HD80N03 Figure 8. Capacitance Vgs (V) C Capacitance(pF) Figure 7. Gate Charge Waveforms Qg(nC) VDS Drain-to-Source Voltage(V) Figure 10. Maximum Safe Operating Area Is (A) Id (A) Figure 9. Body-Diode Characteristics Vsd (V) VDS Drain-to-Source Voltage(V) Figure 11. Normalized Maximum Transient Thermal Impedance -5- 2021-10-11 V1.2 HD80N03 TO-252 Package Information -6- 2021-10-11 V1.2