HF16N50

BVDSS = 500 V RDS(on) typ = 0.40 ȍ HF16N50 ID = 16 A 500V N-Channel MOSFET TO-220F FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology 1 2 3 1.Gate 2. Drain 3. Source ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 58 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) 40ȍ7\S#9GS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25୅ unless otherwise specified Parameter Drain-Source Voltage Value Units 500 V Drain Current – Continuous (TC = 25୅) 16 * A Drain Current – Continuous (TC = 100୅) 11.4 * A IDM Drain Current – Pulsed 72 * A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 950 mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 3.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25୅) - Derate above 25୅ 37 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.29 W/୅ -55 to +150 ୅ 300 ୅ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 3.4 RșJA Junction-to-Ambient -- 62.5 Units ୅/W HF16N50 Apr 2014 HF16N50 Electrical Characteristics TC=25 qC Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 8.0 A -- 0.35 .0.42 Ÿ VGS = 0 V, ID = 250 Ꮃ 500 -- -- V ID = 250 Ꮃ, Referenced to 25୅ -- 0.5 -- V/୅ VDS = 500 V, VGS = 0 V -- -- 1 Ꮃ Off Characteristics BVDSS Drain-Source Breakdown Voltage ǻBVDSS Breakdown Voltage Temperature /ǻTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VDS = 400 V, TC = 125୅ -- -- 10 Ꮃ VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 3300 4300 Ꮔ -- 290 380 Ꮔ -- 16 21 Ꮔ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 250 V, ID = 16 A, RG = 25 Ÿ (Note 4,5) VDS = 400 V, ID = 16 A, VGS = 10 V (Note 4,5) -- 80 170 Ꭸ -- 80 170 Ꭸ Ꭸ -- 190 390 -- 60 130 Ꭸ -- 58 76 nC -- 16 -- nC -- 17 -- nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 18 ISM Pulsed Source-Drain Diode Forward Current -- -- 72 VSD Source-Drain Diode Forward Voltage IS = 16 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 375 -- Ꭸ Qrr Reverse Recovery Charge IS = 16 A, VGS = 0 V diF/dt = 100 A/ȝV -- 4.2 -- ȝ& Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=5.3mH, IAS=16A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH” 5. Essentially Independent of Operating Temperature (Note 4) A HF16N50 Typical Characteristics 100 ID, Drain Current [A] ID, Drain Current [A] VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 10 25oC 150oC 1 -25oC * Notes : 1. 300us Pulse Test 2. TC = 25oC 100 * Notes : 1. VDS= 30V 2. 300us Pulse Test 0.1 100 2 101 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [:], Drain-Source On-Resistance 0.6 0.5 0.4 VGS = 10V 0.3 0.2 VGS = 20V 0.1 10 25oC 150oC * Notes : 1. VGS= 0V 2. 300us Pulse Test Note : TJ = 25oC 1 0.0 0.0 0 8 16 24 32 40 48 56 0.2 Capacitances [pF] 4000 Ciss 3500 3000 2500 Coss 2000 * Note ; 1. VGS = 0 V 2. f = 1 MHz 1500 1000 500 0.8 1.0 100 1.4 VDS = 100V VDS = 250V 10 VDS = 400V 8 6 4 2 Note : ID = 18A Crss 0 10-1 1.2 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4500 0.6 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 5000 0.4 VSD, Source-Drain Voltage [V] ID, Drain Current [A] 101 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 60 (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HF16N50 Typical Characteristics 1.1 1.0  Note : 1. VGS = 0 V 2. ID = 250PA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note : 1. VGS = 10 V 2. ID = 9.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 18 Operation in This Area is Limited by R DS(on) 2 15 10 Ps 101 100 -1 ID, Drain Current [A] 100 Ps 1 ms 10 ms 100 ms DC * Notes : 1. TC = 25 oC 10 10-2 100 12 9 6 3 2. TJ = 150 oC 3. Single Pulse 101 102 0 25 103 50 75 100 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 100 0.2 * Notes : 1. ZTJC(t) = 3.4 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.1 0.05 10-1 0.02 PDM 0.01 t1 single pulse -2 10 10-5 10-4 125 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZTJC(t), Thermal Response ID, Drain Current [A] 10 10-3 10-2 10-1 t2 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 101 150 HF16N50 Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HF16N50 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD HF16N50 Package Dimension {vTYYWmG ±0.20 ±0.20 .2 ±0 0 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20  ij 0.80±0.20 0.50±0.20 2.54typ 2.54typ TO-220FM TO-220F