HF4N60

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors HF4N60 HF4N60 Feature ● N-Channel Enhancement Model MOSFET ● 600V/4.0A, RDS(on)=2.2Ω(MAX) @VGS=10V ● Super high dense cell design for extremely low RDS(on) ● Reliable and Rugged ● Fast switching ● High thermal cycling performance ● Low thermal resistance TO-220F Application ● Switching regulators,Switching converters ● Switch mode power supplies(SMPS) ABSOLUTE MAXIMUM RATINGS (Ta=25℃ Unless otherwise noted) Symbol Limit Units Drain-source Voltage VDS 600 V Gate-source Voltage VGS 30 V Drain-Current Continuous, VGS@10V ID@TC=25℃ 4 A Drain-Current Continuous, VGS@10V ID@TC=150℃ 2 A Parameter ELECTRICAL CHARACTERISTICS (Ta=25℃ Unless otherwise noted) SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIOMNS BVDSS 600 - - V VGS=0V,ID=250μA Zero-Gate Voltage Drain Current IDSS - - 100 μA VDS=600V,VGS=0V Gate Body Leakage Current IGSS - - 100 nA VGS=30V,VDS=0V VGS(th) 2 - 5 v VGS(th)=VDS,ID=250μA RDS(ON) - 2.2 Ω VGS=10V,ID=2.0A v VGS=0V,IS=4.0A PARAMETER Off Characteristics Drain to Source Breakdown Voltage On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD 2.7 SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors HF4N60 SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors HF4N60