HU60N03

BVDSS = 30 V RDS(on) = 0.014Ω HD60N03 / HU60N03 ID = 60 A 30V N-Channel MOSFET TO-252 TO-251 FEATURES  Originative New Design HD60N03  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HU60N03 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.014 Ω (Typ.) @V GS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 30 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 60 A Drain Current – Continuous (TC = 100℃) 36.6 A IDM Drain Current – Pulsed 220 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ IAR Avalanche Current (Note 1) 60 A EAR Repetitive Avalanche Energy (Note 1) 11 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TA = 25℃)* 2.0 W Power Dissipation (TC = 25℃) - Derate above 25℃ 100 W 0.7 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 1.0 RθJA Junction-to-Ambient* -- 40 RθJA Junction-to-Ambient -- 62.5 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Nov 2009 HD60N03_HU60N03 Nov 2009 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 1.0 -- 2.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 30 A -- 0.012 0.014 Ω VGS = 0 V, ID = 250 ㎂ 30 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.03 -- V/℃ VDS = 30 V, VGS = 0 V -- -- 1 ㎂ VDS = 24 V, TC = 150℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 ㎁ -- 875 1140 ㎊ -- 570 740 ㎊ -- 155 200 ㎊ -- 17 45 ㎱ -- 155 320 ㎱ -- 10 30 ㎱ -- 75 160 ㎱ -- 18.5 24 nC -- 7 -- nC -- 9.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 15 V, ID = 30 A, RG = 25 Ω (Note 4,5) VDS = 24 V, ID = 60 A, VGS = 5.0 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 60 ISM Pulsed Source-Drain Diode Forward Current -- -- 240 VSD Source-Drain Diode Forward Voltage IS = 60 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 40 -- ㎱ Qrr Reverse Recovery Charge IS = 60 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 35 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230μH, IAS=60A, VDD=15V, RG=25, Starting TJ =25C 3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Nov 2009 HD60N03_HU60N03 Electrical Characteristics TC=25 C HD60N03_HU60N03 Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 1 10 175℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 15V 2. 250μ s Pulse Test -55℃ 0 -1 0 10 10 1 10 0 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 40 2 IDR, Reverse Drain Current [A] R DS(ON) [mΩ ], Drain-Source On-Resistance 10 30 VGS = 5V VGS = 10V 20 1 10 10 ※ Note : TJ = 25℃ 175℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ 0 0 40 80 120 160 200 240 0 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3000 1.0 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 V GS , Gate-Source Voltage [V] Coss 1500 1.6 1.8 VDS = 15V 10 Ciss 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 1.2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2500 Capacitance [pF] 0.8 VSD, Source-Drain voltage [V] VDS = 24V 8 6 4 2 ※ Note : ID = 60A 0 0 0 -1 10 0 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 5 10 15 20 25 30 35 1 10 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A1. May 2001 (Continued) 1.2 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage HD60N03_HU60N03 Typical Characteristics 1.5 1.0 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 0.5 150 ※ Notes : 1. VGS = 10 V 2. ID = 30 A 0.0 -100 200 -50 10 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3 70 Operation in This Area is Limited by R DS(on) 60 10 50 2 1 ms ID , Drain Current [A] ID , Drain Current [A] 100 µ s 10 ms DC 10 1 ※ Notes : 40 30 20 o 1. TC = 25 C 10 10 10 o 2. TJ = 175 C 3. Single Pulse 0 -1 10 0 0 25 1 10 50 VDS, Drain-Source Voltage [V] 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 0 .2 ※ N otes : 1 . Z θ J C ( t ) = 1 . 5 0 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 10 -1 0 .0 5 PDM 0 .0 2 0 .0 1 JC (t), T h e rm a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] t1 s in g le p u ls e Z θ t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 HD60N03_HU60N03 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 5V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2001 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A1. May 2001 HD60N03_HU60N03 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 HD60N03_HU60N03 Package Dimension TOTO -252 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 0.5+0.1 -0.05 2.3typ 2 3typ 2.3typ ◎ SEMIHOW REV.A0,Sep 2009 HD60N03_HU60N03 Package Dimension TOTO -251 6.6±0.2 2.3±0.1 0.8±0.15 0.6±0.1 2.3typ ±0.4 ± 7.8±0 0.3 7.5 0.75±0.15 7±0.2 0.5±0.05 5.6±0.2 5.35±0.15 0.5+0.1 -0.05 1.2±0.3 2 3typ 2.3typ ◎ SEMIHOW REV.A0,Sep 2009