HR2N60(AHO)

BVDSS = 600 V RDS(on) typ = 4.2 Ω HR2N60 ID = .2 A 600V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol 123 1.Gate 2. Drain 3. Source TC=25℃ unless otherwise specified Parameter Value Units 600 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 2.0 A Drain Current – Continuous (TC = 100℃) 1.14 A IDM Drain Current – Pulsed 7.6 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 2.0 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25℃) * 2.5 W Power Dissipation (TC = 25℃) - Derate above 25℃ 44 W 0.35 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ (Note 1) Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 2.87 RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 * When mounted on the minimum pad size recommended (PCB Mount) Units ℃/W HR2N6 Nov 2007 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units 2.0 -- 4.0 V On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ Static Drain-Source On-Resistance VGS = 10 V, ID = .1 A -- 4.2 5.0 Ω VGS = 0 V, ID = 250 ㎂ 600 -- -- V ID = 250 ㎂, Referenced to 25℃ -- 0.6 -- V/℃ VDS = 600 V, VGS = 0 V -- -- 1 ㎂ VDS = 480 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 280 365 ㎊ -- 37 48 ㎊ -- 6.0 8.0 ㎊ -- 9 28 ㎱ -- 25 60 ㎱ -- 24 58 ㎱ -- 28 66 ㎱ -- 6.0 8.0 nC -- 1.3 -- nC -- 2.6 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 2.0 A, RG = 25 Ω (Note 4,5) VDS = 480V, ID = 2.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 2.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 7.6 VSD Source-Drain Diode Forward Voltage IS = 1.9 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 230 -- ㎱ Qrr Reverse Recovery Charge IS = 2.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.0 -- μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤1.9A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature A HR2N6 Electrical Characteristics TC=25 °C HR2N6 ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON)[Ω], Drain-Source On-Resistance 12 9 VGS = 10V 6 VGS = 20V 3 * Note : TJ = 25oC 0 0 1 2 3 4 5 ID, Drain Current[A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 Capacitance [pF] VGS, Gate-Source Voltage [V] VDS = 120V VDS = 300V 10 VDS = 480V 8 6 4 2 * Note : ID = 2.0A 0 0 2 4 6 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 8 HR2N6 Typical Characteristics (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 0.95 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] o TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 1.5 ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms 100 DC * Notes : 1. TC = 25 oC 1.0 0.5 2. TJ = 150 oC 3. Single Pulse 10-1 0 10 101 102 0.0 25 103 50 75 100 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 100 * Notes : 1. ZθJC(t) = 2.87 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 0.1 0.05 10-1 0.02 0.01 PDM single pulse t1 -2 10 10-5 10-4 125 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response ID, Drain Current [A] 10 10-3 10-2 10-1 t2 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 101 150 HR2N6 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HR2N6 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TO-126 PACKAGE OUTLINE DIMENSIONS D A A1 L1 E P φ L b1 b e C e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 2.290TYP e 0.090TYP e1 4.480 4.680 0.176 0.184 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 φ 3.000 3.200 0.118 0.126