HU4N65

BVDSS = 650 V RDS(on) typ = 2.3 ȍ HD4N65 / HU4N65 ID = 4.0 A 650V N-Channel MOSFET TO-252 TO-251 2 FEATURES 1 1 2 3 ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ 3 Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10 10.5 5 nC (Typ (Typ.)) Extended Safe Operating Area Lower RDS(ON) : 2.3 ȍ (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol HD5N65 HU5N65 1.Gate 2. Drain 3. Source TC=25୅ unless otherwise specified Parameter Value Units 650 9 VDSS Drain Source Voltage Drain-Source ID Drain Current – Continuous (TC = 25ഒ) 4.0 $ Drain Current – Continuous (TC = 100ഒ͚ 2.3 $ IDM Drain Current – Pulsed 16.0 $ VGS Gate-Source Voltage ρ30 9 EAS Single Pulsed Avalanche Energy (Note 2) 180 P- IAR Avalanche Current (Note 1) 40 4.0 $ EAR Repetitive Avalanche Energy (Note 1) 9.1 P- dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 9QV Power Dissipation (TA = 25ఁ) * 2.5 : Power Dissipation (TC = 25ଇ) - Derate above 25ଇ 91 : PD (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 0.73 :ഒ -55 to +150 ഒ 300 ഒ Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 1.37 RșJA Junction-to-Ambient* Junction to Ambient -- 50 RșJA Junction-to-Ambient -- 110 Units ഒ: * When mounted on the minimum pad size recommended (PCB Mount) క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡ HD4N65_HU4N65 Mar 2010 Symbol y Parameter unless otherwise specified Test Conditions Min Typ y Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 2.0 A -- 2.3 2.9 ‫ש‬ VGS = 0 V V, ID = 250 Ꮃ 650 -- -- V ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ -- 0.6 -- ·͠ఁ VDS = 650 V, VGS = 0 V -- -- 1 Ꮃ VDS = 520 V, TC = 125ఁ -- -- 10 Ꮃ Off Characteristics BVDSS D i S Drain-Source Breakdown B kd V Voltage lt ԩBVDSS Breakdown Voltage Temperature Coefficient /ԩTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 Ꮂ IGSSR G t B d L Gate-Body Leakage k C Current, t Reverse VGS = -30 V, VDS = 0 V -- -- -100 Ꮂ -- 520 680 Ꮔ -- 60 80 Ꮔ -- 8.0 10.5 Ꮔ -- 11 33 Ꭸ -- 45 90 Ꭸ -- 40 88 Ꭸ -- 48 100 Ꭸ -- 10.5 13.5 Οʹ -- 2.5 -- Οʹ -- 4.0 -- Οʹ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 325 V, ID = 4.2 A, RG = 25 ‫ש‬ ͙ͿΠΥΖ͚͑ͥͦ͝ VDS = 520V, ID = 4.2 A, VGS = 10 V ͙ͿΠΥΖ͚͑ͥͦ͝ Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 4.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 16.0 VSD Source-Drain Source Drain Diode Forward Voltage IS = 4.0 40A A, VGS = 0 V -- -- 14 1.4 V trr Reverse Recovery Time -- 300 -- Ꭸ Qrr Reverse Recovery Charge IS = 4.2 A, VGS = 0 V diF/dt = 100 A/ȝs (Note 4) -- 2.2 -- ȝC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=18.9mH, IAS=4.2A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD”4.0A, di/dt”200A/ȝs, VDD”BVDSS , Starting TJ =25 qC 4 P 4. Pulse l T Testt : Pulse P l Width ” 300ȝs, 300 D Duty t C Cycle l ” 2% 5. Essentially Independent of Operating Temperature క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡ HD4N65_HU4N65 Electrical Characteristics TC=25 qC HD4N65_HU4N65 Typical Characteristics ID, Dra ain Current [A] ID , Drain n Current [A] 1 10 o 150 C o 25 C 0 10 o -55 C * Note 1. VDS = 50V 2. 250Ps Pulse Test -1 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR , Revers se Drain Current [A] RDS(on) , [:] Drain-Sou urce On-Resistance 6 VGS = 10V 5 4 3 VGS = 20V 2 1 1 10 0 10 o 150 C o 25 C * Note : 1. VGS = 0V 2. 250Ps Pulse Test o * Note : TJ = 25 C -1 10 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-Drain Voltage [V] ID , Drain Current [A] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 1000 Ciss = Cgs + Cgd (Cds = shorted) Crss = Cgd 800 Capacittances [pF] Ciss 600 Coss 400 * Note ; 1. VGS = 0 V Crss 200 2. f = 1 MHz VGS, Gate-S Source Voltage [V] Coss = Cds + Cgd VDS = 130V 10 VDS = 325V VDS = 520V 8 6 4 2 * Note : ID = 4.2A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 0 2 4 6 8 10 12 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡ (continued) 1.2 2.5 RDS(ON), (Normalized) Drain-Sourc ce On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HD4N65_HU4N65 Typical Characteristics 1.1 1.0 * Note : 1. VGS = 0 V 0.9 2. ID = 250 PA 2.0 1.5 1.0 0.5 * Note : 1. VGS = 10 V 2. ID = 2.0 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 4 Operation in This Area is Limited by R DS(on) 10 Ps 100 Ps 1 ms 10 ms 100 ms 0 10 DC 3 2 1 * Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 0 1 10 2 10 0 25 3 10 10 50 100 125 150 TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area 10 75 o VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature p 0 (t), Therrmal Response D = 0 .5 0 .2 * N o te s : o 1 . Z T J C ( t) = 1 .3 7 C /W M a x . 0 .1 3 . T J M - T C = P D M * Z T J C ( t) 2 . D u ty F a c to r , D = t 1 /t 2 10 -1 0 .0 05 0 .0 2 PDM 0 .0 1 TJC 10 s in g le p u ls e Z ID, Drain n Current [A] ain Current [A] ID, Dra 1 10 10 t1 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡ HD4N65_HU4N65 Fig 12. Gate Charge Test Circuit & Waveform 50Kȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡ HD4N65_HU4N65 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period G Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡ HD4N65_HU4N65 Package Dimension {vT {v TY\Y 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 0.5+0.1 -0.05 2.3typ 2 3typ 2.3typ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡ HD4N65_HU4N65 Package Dimension {vT {v TY\X 6.6±0.2 2.3±0.1 0.8±0.15 0.6±0.1 2.3typ ·WU[ · ^U_±0 0.3 7.5 0.75±0.15 7±0.2 0.5±0.05 5.6±0.2 5.35±0.15 0.5+0.1 -0.05 1.2±0.3 2 3typ 2.3typ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡