2N5551 C

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol Test 1.EMITTER 2.BASE 3.COLLECTOR 1 2 3 unless otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 μA，IE=0 180 V Collector-emitter voltage V(BR)CEO Ic= 100uA， IB=0 160 V V(BR)EBO IE= 100μA， IC=0 6 V breakdown Emitter-base breakdown voltage Collector cut-off current ICBO VCB= 180V Emitter cut-off current IEBO VEB= 4 IE=0 V， IC=0 0.1 μA 0.1 μA hFE（1） VCE= 5 V, IC= 1 mA 80 hFE（2） VCE= 5 V, IC = 10 mA 80 hFE（3） VCE= 5 V, IC= 50 mA 50 Collector-emitter saturation voltage VCEsat IC= 50 mA, IB= 5 mA 0.5 V Base-emitter saturation voltage VBEsat IC= 50 mA, IB= 5 mA 1 V DC current gain Transition frequency fT VCE= 5 V,IC= 10 mA,,f =30MHz 250 80 MHz CLASSIFICATION OF h FE(2) Rank A B C Range 80-160 120-180 150-250 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015