HD40N04(ADE)

HD40N04 N-Channel Trench Power MOSFET General Description The HD 40N04 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 40V,ID =40A RDS(ON) < 15 mΩ @ VGS =10V RDS(ON) < 21 mΩ @ VGS =4.5V Schematic Diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● ● ● PWM applications Load switch Power management TO-252(DPAK) top view 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity HD40N04 HD40N04 TO-252 325mm 16mm 2500 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 40 V ±20 V Drain Current-Continuous(Tc=25℃) 40 A Drain Current-Continuous(Tc=100℃) 28 A 160 A VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) 50 Maximum Power Dissipation(Tc=100℃) 25 PD EAS TJ,TSTG W Avalanche energy Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol RJC (Note 2) Parameter Thermal Resistance,Junction-to-Case -1- 90 mJ -55 To 175 ℃ Typ Max Unit - 3 ℃/W 2019-08-26 V1.1 HD40N04 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 2.5 V VGS(th) gFS RDS(ON) Forward Transconductance Drain-Source On-State Resistance 40 1 V 1.7 VDS=5V,ID=10A 21 S VGS=10V, ID=20A 10.5 15 mΩ VGS=4.5V, ID=10A 15 21 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=25V,VGS=0V, f=1.0MHz VGS=0V, VDS=0V,f=1.0MHz 944 pF 83 pF 70 pF 2.5 Ω 5.5 nS 12 nS 22 nS Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time VGS=10V, VDS=20V, RL=1,RGEN=3 tf Turn-Off Fall Time 6 nS Qg Total Gate Charge 23.5 nC Qgs Gate-Source Charge 2.1 nC Qgd Gate-Drain Charge 8.9 nC VGS=10V, VDS=25V, ID=14A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A 40 A 1.2 V trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/s 6 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 4.2 nC Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 2.EAS condition: TJ=25℃,VDD=30V,VG=10V, RG=25Ω -2- 2019-08-26 V1.1 HD40N04 Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： -3- 2019-08-26 V1.1 HD40N04 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Id (A) Figure 2. Transfer Characteristics Id (A) Figure 1. Output Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 4. Drain Current Id (A) Normalized BVDSS Figure 3. Max BVDSS vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 6. RDS(ON) vs Junction Temperature Normalized Vth Normalized Rdson Figure 5. VGS(th) vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) -4- 2019-08-26 V1.1 HD40N04 Figure 8. Capacitance Vgs (V) C Capacitance(pF) Figure 7. Gate Charge Waveforms Qg(nC) VDS Drain-to-Source Voltage(V) Figure 10. Maximum Safe Operating Area Is (A) Id (A) Figure 9. Body-Diode Characteristics Vsd (V) VDS Drain-to-Source Voltage(V) -5- 2019-08-26 V1.1 HD40N04 TO-252 Package Information -6- 2019-08-26 V1.1