HF13N50

BVDSS = 500 V RDS(on) typ = 0.4 ȍ HFS13N50 ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ (Typ.)) Extended Safe Operating Area Lower RDS(ON) : 0.4 ȍ (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol 1 2 3 1.Gate 2. Drain 3. Source TC=25୅ unless otherwise specified Parameter Value Units 500 V VDSS Drain Source Voltage Drain-Source ID Drain Current – Continuous (TC = 25୅) 13* A Drain Current – Continuous (TC = 100୅) 8* A IDM Drain Current – Pulsed 52* A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ IAR Avalanche Current (Note 1) 13 A EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25୅) - Derate above 25୅ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 48 W 0.39 W/୅ -55 to +150 ୅ 300 ୅ *Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 2.58 RșJA Junction-to-Ambient Junction to Ambient -- 62.5 Units ୅/W HF13N50 Sep 2009 Symbol y Parameter unless otherwise specified Test Conditions Min Typ y Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ᒺ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 6.5 A -- 0.39 0.48 Ÿ VGS = 0 V V, ID = 250 ᒺ 500 -- -- V ID = 250 ᒺ, Referenced to 25୅ -- 0.5 -- V/୅ VDS = 500 V, VGS = 0 V -- -- 1 ᒺ VDS = 400 V, TC = 125୅ -- -- 10 ᒺ Off Characteristics BVDSS D i S Drain-Source Breakdown B kd V Voltage lt ǻBVDSS Breakdown Voltage Temperature Coefficient /ǻTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ᒹ IGSSR G t B d L Gate-Body Leakage k C Current, t Reverse VGS = -30 V, VDS = 0 V -- -- -100 ᒹ -- 1550 2000 ᓂ -- 205 265 ᓂ -- 23 30 ᓂ -- 25 60 ᓩ -- 100 210 ᓩ -- 130 270 ᓩ -- 100 210 ᓩ -- 38 50 nC -- 6.0 -- nC -- 16.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 250 V, ID = 13 A, RG = 25 Ÿ (Note 4,5) VDS = 400V, ID = 13 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 13 ISM Pulsed Source-Drain Diode Forward Current -- -- 52 VSD Source-Drain Source Drain Diode Forward Voltage IS = 13 A A, VGS = 0 V -- -- 14 1.4 V trr Reverse Recovery Time -- 410 -- ᓩ Qrr Reverse Recovery Charge IS = 13 A, VGS = 0 V diF/dt = 100 A/ȝs (Note 4) -- 4.5 -- ȝC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=6mH, IAS=13A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD”13A, di/dt”200A/ȝs, VDD”BVDSS , Starting TJ =25 qC 4 P 4. Pulse l T Testt : Pulse P l Width ” 300ȝs, 300 D Duty t C Cycle l ” 2% 5. Essentially Independent of Operating Temperature A HF13N50 Electrical Characteristics TC=25 qC HF13N50 ID, Drain n Current [A] ID, Drain n Current [A] Typical Characteristics VGS, Gate-Source Voltage[V] VDS, Drain-Source Voltage[V] Figure 1. On Region Characteristics RDDS(ON)[Ÿ], Drain-Sourcce On-Resistance IDR, Reverse e Drain Current [A] Figure 2. Transfer Characteristics ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 3000 12 Ciss = Cgs + Cgd (Cds = shorted) Crss = Cgd 2500 Capacittances [pF] Ciss 2000 Coss 1500 * Note ; 1. VGS = 0 V 1000 Crss 2. f = 1 MHz 500 VGS, Gate-S Source Voltage [V] Coss = Cds + Cgd 10 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 13.0A 0 -1 10 0 0 10 1 10 0 8 16 24 32 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 40 HF13N50 Typical Characteristics (continued) RDS(ON), (Normalized) Drain-Sourcce On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 3.0 2.5 2.0 1.5 1.0 Note : 0.5 1. VGS = 10 V 2. ID = 6.5 A 0.0 -100 -50 0 50 100 150 200 o TJ, Junction Temperature [oC] TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 15 Operation in This Area is Limited by R DS(on) 2 10 10 Ps 12 ID, Drain n Current [A] 1 10 1 ms 10 ms 100 ms 0 DC 10 -1 10 * Notes : o 1. TC = 25 C 9 6 3 o 2. TJ = 150 C 3. Single Pulse -2 0 1 10 2 10 0 25 3 10 10 50 75 (t), Therrmal Response Figure 10. Maximum Drain Current vs Case Temperature p D = 0 .5 0 0 .2 * N o te s : 1 . Z T J C ( t ) = 2 .5 8 0 .1 10 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 0 .0 5 -1 3 . T J M - T C = P D M * Z T J C ( t) 0 .0 2 0 .0 1 PDM s in g le p u ls e 10 t1 -2 10 -5 10 -4 125 TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area 10 100 o VDS, Drain-Source Voltage [V] TJC 10 Z ID, Drain Current [A] 100 Ps 10 -3 10 -2 10 -1 t2 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve 10 1 150 HF13N50 Fig 12. Gate Charge Test Circuit & Waveform 50KŸ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HF13N50 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period G Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD HF13N50 Package Dimension {vT {v TYYWm ±0.20 ±0.20 .20 ±0 ±0 20 2 54±0.20 2.54 6.68±0.20 0.70±0.20 12.42±0.20 3.30±±0.20 ±0 20 2.76 2 76±0.20 1.47max 9.75±0.20 15.87±00.20 .1 8 ij3 0 20 0.80 0 80±0.20 2.54typ 2.54typ 0 20 0.50 0 50±0.20