HF18N50

H F18N50 500V N-Channel MOSFET FEATURES ⚫ Fast switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability APPLICATIONS ⚫ Switch Mode Power Supply (SMPS) ⚫ Uninterruptible Power Supply (UPS) ⚫ Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking HF18N50 TO-220F HF18N50 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDSS 500 V ID 18 A IDM 72 A VGSS ±30 V EAS 980 mJ IAS 14 A EAR 3.92 mJ PD 98 W TJ, Tstg -55~+150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 1.27 Thermal Resistance, Junction-to-Ambient RthJA 62.5 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current (note1) Repetitive Avalanche Energy (note1) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Parameter ºC/W 1 V4.2 H F18N50 Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. -- Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 500 -- Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V, TJ = 25ºC -- -- Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 9A -- 0.26 0.32 Ω -- 2367 -- -- 228 -- 1 V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 15 -- Total Gate Charge Qg -- 53.4 -- Gate-Source Charge Qgs -- 10 -- Gate-Drain Charge Qgd -- 20 -- Turn-on Delay Time td(on) -- 51.3 -- Turn-on Rise Time tr -- 36.5 -- Turn-off Delay Time td(off) -- 232 -- -- 61 -- -- -- 18 -- -- 72 -- -- 1.4 V -- 497 -- ns -- 4 -- μC Turn-off Fall Time VDD =400V, ID = 18A, VGS = 10V VDD = 250V, ID =18A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25ºC, ISD = 9A, VGS = 0V VGS = 0V,IS = 18A, diF/dt =100A /μs A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=10mH, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 2 V4.2 H F18N50 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage 35 102 ID, Drain Current (A) 25 20 IS, Source Current (A) 20V 10V 8V 7V 6V 5V 30 15 10 5 0 0 4 8 12 16 TJ = 150ºC 101 TJ = 25ºC 100 10-1 20 0.2 VDS, Drain-to-Source Voltage (V) 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature Figure 4. BVDSS Variation vs. Temperature 1.2 18 VGS = 0V ID=250uA 1.15 BVDSS (Normalized) ID, Drain Current (A) 20 16 14 12 10 8 6 1.1 1.05 1 0.95 4 2 0.9 0 -50 25 50 75 100 125 TC, Case Temperature (A) 0 25 50 75 100 125 150 T C, Case Temperature (ºC) Figure 6. On-Resistance vs. Temperature RDS(on), On-Resistance (Normalized) Figure 5. Transfer Characteristics TJ = 25ºC ID, Drain Current (A) -25 150 TJ = 150ºC 3 VGS = 10V ID= 9A 2.5 2 1.5 1 0.5 0 -75 VGS, Gate-to-Source Voltage (V) -25 25 75 125 TJ, Junction Temperature (ºC) 3 V4.2 H F18N50 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 10 VGS, Gate-to-Source Voltage (V) 104 Capacitance (pF) Ciss 103 Coss 102 Crss 101 VGS = 0V f = 1MHz 100 VDD = 100V VDD = 250V 8 VDD = 400V 6 4 2 0 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) 0 10 20 30 40 50 60 Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance ZthJC, Thermal Impedance (K/W) 101 100 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 V4.2 H F18N50 Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform 5 V4.2 H F18N50 TO-220F SYMBOLS A B B1 C C1 D E F G H L N Q ΦP 6 MILLIMETERS MIN MAX 9.70 15.50 8.99 4.40 2.15 2.50 0.70 0.40 1.12 3.40 12.60 2.34 3.15 3.00 10.30 16.10 9.39 4.80 2.55 2.90 0.90 0.60 1.42 3.80 13.60 2.74 3.55 3.30 V4.2