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HF25N50

HF25N50

  • 厂商:

    HL(豪林)

  • 封装:

    TO-220F-3

  • 描述:

    类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):25A;功率(Pd):173W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,12.5A;阈值电压(Vgs(th)@...

  • 数据手册
  • 价格&库存
HF25N50 数据手册
HF25N50,HP25N50 500V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Symbol Value Unit VDSS 500 V ID 25 A IDM 100 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 1280 mJ Avalanche Current (note1) IAR 16 A Repetitive Avalanche Energy (note1) EAR 142 mJ PD 173 W TJ, Tstg -55~+150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.72 Thermal Resistance, Junction-to-Ambient RthJA 62.5 Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Parameter ºC/W 1 V3.0 HF25N50,HP25N50 Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 500 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 12.5A -- 0.21 0.3 Ω -- 3039 -- -- 325 -- Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 41 -- Total Gate Charge Qg -- 80 -- Gate-Source Charge Qgs -- 12 -- Gate-Drain Charge Qgd -- 34 -- Turn-on Delay Time td(on) -- 37 -- Turn-on Rise Time tr -- 66 -- Turn-off Delay Time td(off) -- 175 -- -- 84 -- -- -- 25 -- -- 100 Turn-off Fall Time VDD = 400V, ID = 25A, VGS = 10V VDD 250V, ID =25A, RG =25Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 25A, VGS = 0V -- -- 1.4 V Reverse Recovery Time trr VGS = 0V, IS = 25A, -- 450 -- ns Reverse Recovery Charge Qrr diF/dt = 100A/μs -- 7.1 -- μC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS =4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 2 V3.0 HF25N50,HP25N50 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage 35 102 ID, Drain Current (A) 25 20 IS, Source Current (A) 20V 10V 8V 7V 6V 5V 30 15 10 5 0 TJ = 150ºC 101 TJ = 25ºC 100 10-1 0 2 4 6 8 10 12 0.2 VDS, Drain-to-Source Voltage (V) 30 1.2 25 1.15 BVDSS (Normalized) ID, Drain Current (A) 0.8 1 1.2 1.4 Figure 4. BVDSS Variation vs. Temperature 20 15 10 5 VGS = 0V ID=250uA 1.1 1.05 1 0.95 0 0 30 60 90 120 0.9 150 -50 TC, Case Temperature (A) RDS(on), On-Resistance (Normalized) TJ = 25ºC 20 TJ = 150ºC 15 10 5 0 2 4 6 0 25 50 75 100 125 150 Figure 6. On-Resistance vs. Temperature 30 25 -25 TC, Case Temperature (ºC) Figure 5. Transfer Characteristics ID, Drain Current (A) 0.6 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature 0 0.4 8 3 VGS = 10V ID=12.5A 2.5 2 1.5 1 0.5 0 -75 10 VGS, Gate-to-Source Voltage (V) -25 25 75 125 TJ, Junction Temperature (ºC) 3 V3.0 HF25N50,HP25N50 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 12 VGS, Gate-to-Source Voltage (V) 104 Capacitance (pF) Ciss 103 Coss 102 Crss VGS = 0V f = 1MHz 101 0 15 30 45 VDD = 100V 10 VDD = 250V 8 VDD = 400V 6 4 2 0 60 0 VDS, Drain-to-Source Voltage (V) 20 40 60 80 100 Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance TO-220F ZthJC, Thermal Impedance (ºC/W) 100 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 V3.0 HF25N50,HP25N50 Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform 5 V3.0 HF25N50,HP25N50 TO-220F 6 V3.0 HF25N50,HP25N50 TO-220
HF25N50 价格&库存

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