HN13003

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors HN13003 ( ADB ) TRANSISTOR( NPN ) TO-92 FEATURES Power dissipation PCM : 1 1. ＢＡＳＥ W(Tamb=25℃) 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.20 A PD Power Dissipation 1 W TJ ,Tstg Operating and Storage and Temperature Range -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless Symbol Parameter Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1000μA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 450 V Emitter-base breakdown voltage V(BR)EBO IE= 1000μA, IC=0 9 V mA, IB=0 Collector cut-off current ICBO VCB= 700 V, IE=0 1000 µA Collector cut-off current ICEO VCE= 400 V, IB=0 500 µA Emitter cut-off current IEBO VEB= 7 100 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage CLASSIFICATION OF V, IC=0 HFE VCE= 10 V, IC= 0.4 A 20 40 VCE(sat)1 IC=1500mA,IB= 500 mA 3 V VCE(sat)2 IC=500mA, IB= 100mA 0.8 V VBE(sat) IC=500mA, IB= 100mA 1 V HFE(1) Rank Range 20-25 25-30 30-35 35-40 Typical Characteristics HN13003