HP16N10

H P16N10,H F16N10 100V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO220F Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage TO-220 VDSS 100 V ID 16 A IDM 64 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 211 mJ Avalanche Current (note1) IAS 6.5 A Repetitive Avalanche Energy (note1) EAR 126 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD 98 TJ, Tstg 160 -55~+150 W ºC Thermal Resistance Value Parameter Symbol Unit TO220F TO-220 Thermal Resistance, Junction-to-Case RthJC 1.78 1.08 Thermal Resistance, Junction-to-Ambient RthJA 62.5 60 ºC/W 1 V3.0 H P16N10,H F16N10 Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS,VDS = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 8A -- 0.080 0.098 Ω -- 519 -- -- 173 -- Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 103 -- Total Gate Charge Qg -- 34 -- Gate-Source Charge Qgs -- 6 -- Gate-Drain Charge Qgd -- 17 -- Turn-on Delay Time td(on) -- 34 -- Turn-on Rise Time tr -- 40 -- Turn-off Delay Time td(off) -- 140 -- -- 49 -- -- -- 16 -- -- 64 Turn-off Fall Time VDD = 80V, ID = 16A, VGS = 10V VDD = 50V, ID =16A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 8A, VGS = 0V -- -- 1.4 V Reverse Recovery Time trr -- 594 -- ns Reverse Recovery Charge Qrr VGS = 0V,IF = 16A, diF/dt =100A /μs -- 0.65 -- μC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=10mH, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 2 V3.0 H P16N10,H F16N10 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage 25 102 ID, Drain Current (A) 15 IS, Source Current (A) 20V 10V 8V 7V 6V 5V 20 10 5 0 0 2 4 6 8 10 12 14 16 18 TJ = 150ºC 101 TJ = 25ºC 100 10-1 20 0.2 VDS, Drain-to-Source Voltage (V) 0.8 1 1.2 1.4 Figure 4. BVDSS Variation vs. Temperature 18 1.2 VGS = 0V ID=250uA 16 1.15 14 BVDSS (Normalized) ID, Drain Current (A) 0.6 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature 12 10 8 6 4 1.1 1.05 1 0.95 2 0 0 30 60 90 120 0.9 150 -50 TC, Case Temperature (A) RDS(on), On-Resistance (Normalized) TJ = 25ºC 12 10 TJ = 150ºC 8 6 4 2 0 0 2 4 6 0 25 50 75 100 125 150 Figure 6. On-Resistance vs. Temperature 16 14 -25 T C, Case Temperature (ºC) Figure 5. Transfer Characteristics ID, Drain Current (A) 0.4 8 3 VGS = 10V ID= 8A 2.5 2 1.5 1 0.5 0 -75 10 VGS, Gate-to-Source Voltage (V) -25 25 75 125 TJ, Junction Temperature (ºC) 3 V3.0 H P16N10,H F16N10 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 103 VGS, Gate-to-Source Voltage (V) Capacitance (pF) 104 Ciss Coss 102 Crss 101 VGS = 0V f = 1MHz VDD = 20V VDD = 50V VDD = 80V 100 VDS, Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance TO-220F ZthJC, Thermal Impedance (ºC/W) 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 V3.0 H P16N10,H F16N10 Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform 5 V3.0 H P16N10,H F16N10 TO-220F 6 V3.0 H P16N10,H F16N10 TO-220 7 V3.0