HP640

HF640,HP640 200V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking HF640 TO-220F HF640 HP640 TO-220 HP640 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO-220F Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage TO-220 VDSS 200 V ID 18 A IDM 72 A VGSS ±20 V Single Pulse Avalanche Energy (note2) EAS 722 mJ Avalanche Current (note1) IAR 12 A Repetitive Avalanche Energy (note1) EAR 8.3 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD 63.7 TJ, Tstg 104 -55~+150 W C º Thermal Resistance Value Parameter Symbol Unit TO-220F TO-220 Thermal Resistance, Junction-to-Case RthJC 1.96 1.2 Thermal Resistance, Junction-to-Ambient RthJA 62.5 60 1 K/W V3.0 HF640,HP640 Specifications TJ = 25ºC , unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 200 -- -- VDS = 200V, VGS = 0V, TJ = 25ºC -- -- 5 VDS = 160V, VGS = 0V, TJ = 125ºC -- -- 100 Static Drain-Source Breakdown Voltage V(BR)DSS V Zero Gate Voltage Drain Current IDSS Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 9A -- 0.12 0.15 Ω -- 1318 -- -- 180 -- -- 75 -- -- 41 -- -- 5.5 -- μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 25V, f = 1.0MHz VDD 160V, ID = 18A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 19.5 -- Turn-on Delay Time td(on) -- 24 -- Turn-on Rise Time tr -- 45 -- Turn-off Delay Time td(off) -- 101 -- -- 95 -- -- -- 18 -- -- 72 Turn-off Fall Time VDD = 100V, ID =18A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 18A, VGS = 0V -- -- 1.4 V Reverse Recovery Time trr -- 230 -- ns Reverse Recovery Charge Qrr VGS = 0V,IS = 18A, diF/dt =100A /μs -- 1.8 -- μC TC = 25 ºC A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 15A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 C º 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 2 V3.0 HF640,HP640 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) 90 102 70 60 50 IS, Source Current (A) 20V 10V 8V 7V 6V 5V 80 ID, Drain Current (A) Figure 2. Body Diode Forward Voltage 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 TJ = 150ºC 101 TJ = 25ºC 100 10-1 20 0.2 VDS, Drain-to-Source Voltage (V) 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature Figure 4. BVDSS Variation vs. Temperature 1.15 20 VGS = 0V ID = 250uA 18 16 BVDSS (Normalized) ID, Drain Current (A) 0.4 14 12 10 8 6 4 1.1 1.05 1 0.95 2 0 0.9 25 50 75 100 125 150 -50 TC, Case Temperature (A) RDS(on), On-Resistance (Normalized) ID, Drain Current (A) 50 40 TJ = 25ºC TJ = 150ºC 10 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) . 100 150 Figure 6. On-Resistance vs. Temperature 60 20 50 TJ, Junction Temperature (ºC) Figure 5. Transfer Characteristics 30 0 3 VGS = 10V ID = 9A 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 TJ, Junction Temperature (ºC) 3 V3.0 HF640,HP640 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 12 VGS, Gate-to-Source Voltage (V) Capacitance (pF) 104 Ciss 103 Coss 102 VGS = 0V f = 1MHz Crss 101 0 20 40 60 VDD = 40V 10 VDD = 100V 8 VDD = 160V 6 4 2 0 0 10 VDS, Drain-to-Source Voltage (V) 40 50 Figure 10. Transient Thermal Impedance TO-220 101 ZthJC, Thermal Impedance (K/W) 101 ZthJC, Thermal Impedance (K/W) 30 Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance TO-220F 100 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-6 20 10-5 10-4 10-3 10-2 10-1 100 101 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-4 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 Tp, Pulse Width (s) Tp, Pulse Width (s) . 100 4 V3.0 HF640,HP640 Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform . 5 V3.0 HF640,HP640 TO-220F . 6 V3.0 HF640,HP640 TO-220 7 V3.0