13001 T

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 13001 TRANSISTOR (NPN) TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 7 V Collector cut-off current ICBO VCB= 600V , IE=0 100 μA Collector cut-off current ICEO VCE= 400V, IB=0 200 μA Emitter cut-off current IEBO VEB= 100 μA hFE(1) VCE= 20V, IC= 20mA 10 hFE(2) VCE= 10V, IC= 0.25 mA 5 DC current gain 7V, IC=0 40 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V Transition frequency fT Fall time tf Storage time tS VCE= 20V, IC=20mA f = 1MHz 8 MHz VCC=45V, IC=50mA IB1= -IB2=5mA 0.3 μs 1.5 μs CLASSIFICATION OF hFE(1) Range 10-13 13-16 16-19 19-22 22-25 25-28 28-31 31-34 34-37 37-40 Typical Characteristics 13001