BVDSS = 650 V
RDS(on) typ = 2.8 Ω
HF5N65
ID = 5.0 A
650V N-Channel MOSFET
TO-220F
FEATURES
Originative New Design
1
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 15 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 2.8 Ω (Typ.) @VGS=10V
100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25℃ unless otherwise specified
Parameter
Value
Units
650
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25℃)
5.0*
A
Drain Current
– Continuous (TC = 100℃)
2.5*
A
IDM
Drain Current
– Pulsed
16*
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
240
mJ
IAR
Avalanche Current
(Note 1)
5.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25℃)
- Derate above 25℃
33
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
0.26
W/℃
-55 to +150
℃
300
℃
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RθJC
Symbol
Junction-to-Case
Parameter
--
3.79
RθJA
Junction-to-Ambient
--
62.5
Units
℃/W
HF5N65
July 2005
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.50 A
--
2.0
2.8
Ω
650
--
--
V
ID = 250 ㎂, Referenced to25℃
--
0.65
--
V/℃
VDS = 600 V, VGS = 0 V
--
--
1
㎂
VDS = 480 V, TC = 125℃
--
--
10
㎂
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
Coefficient
/ΔTJ
IDSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 ㎂
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
㎁
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
㎁
--
600
780
㎊
--
65
85
㎊
--
11
14
㎊
--
15
30
㎱
--
40
80
㎱
--
50
100
㎱
--
40
80
㎱
--
15
20
nC
--
3.4
--
nC
--
6.7
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 5.0 A,
RG = 25 Ω
(Note 4,5)
VDS = 480V, ID = 5.0 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
5.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
16
VSD
Source-Drain Diode Forward Voltage
IS = 5.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
300
--
㎱
Qrr
Reverse Recovery Charge
IS = 5.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
2.2
--
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=27.5mH, IAS=5.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤4.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
A
HF5N65
Electrical Characteristics TC=25 °C
HF5N65
Typical Characteristics
V
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottem
5.0V
Top:
101
ID, Drain Current [A]
ID, Drain Current [A]
101
100
10-1
150℃
100
25℃
-55℃
※ Note :
1. 250㎲ Pulse Test
2. TC=25℃
10-1
100
10-1
101
2
4
VDS, Drain-Source Voltage [V]
※ Note :
1. VDS=40V
2. 250㎲ Pulse Test
6
8
10
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
12
101
IDR, Reverse Drain Current [A]
RDS(ON)[Ω],
Drain-Source On-Resistance
10
VGS=10V
8
VGS=20V
6
4
100
150℃
25℃
※ Note :
1. VGS=0V
2. 250㎲ Pulse Test
2
※ Note : TJ=25℃
0
0
2
4
6
8
10
10-1
0.2
12
0.4
0.6
Capacitances [pF]
Ciss
800
600
Coss
400
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
1.2
1.4
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1200
0.8
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
VDS = 120V
10
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 4A
0
10-1
100
101
0
0
2
4
6
8
10
12
14
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
16
HF5N65
Typical Characteristics
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Note :
1. VGS=0V
2. ID=250㎂
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Note :
1. VGS = 10 V
2. ID = 2.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
4
Operation in This Area
is Limited by R DS(on)
1 ms
10 ms
100 ms
DC
100
10-1
3
2
1
* Notes :
1. TC = 25 oC
o
10-2
100
2. TJ = 150 C
3. Single Pulse
101
102
0
25
103
50
75
100
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0
10
0.2
※ Notes :
1. Zθ JC(t) = 3.79 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
0.1
0.05
-1
10
0.02
PDM
0.01
t1
single pulse
-2
10
-5
10
-4
10
125
TC, Case Temperature [ ℃]
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
101
-3
10
-2
10
-1
10
t2
0
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
1
10
150
HF5N65
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
HF5N65
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
HF5N65
Package Dimension
TO-220F
±0.20
±0.20
0
0.2
2.54±0.20
6.68±0.20
0.70±0.20
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
φ
8±
1
.
3
0.80±0.20
2.54typ
2.54typ
0.50±0.20