HB3710T

HP3710T/HB3710T Dec 2018 BVDSS = 100V RDS(on) typ =0.011 Ω HP3710T/HB3710T 100V N-Channel MOSFET TO-263 TO-220 FEATURES HB3710T  Originative New Design 1 2 1 3 HP3710T 2 3  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 22 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.0110 Ω (Typ.) @V GS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 100 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 50 A Drain Current – Continuous (TC = 100℃) 30A A IDM Drain Current – Pulsed 230 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 20 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.8 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 200 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 1.3 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.85 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units ℃/W 1 HP3710T/HB3710T T N-Channel 100V(D-S) MOSFET Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Parameter Electrical Characteristics (Tj =25℃ Unless Otherwise Specified) Symbol Parameter Conditions Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 2 IGSS Gate Leakage Current IDSS Typ Max Unit STATIC V 4 V VDS=0V, VGS=±20V ±100 nA Zero Gate Voltage Drain Current VDS=100V, VGS=0V 1 μA RDS(ON) Drain-Source On-State Resistance VGS=10V, ID= 11.5A 11 14 mΩ VSD Diode Forward Voltage IS=1A, VGS=0V 0.6 1 V DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Trr Reverse Recovery Time 40 VDS=50V,VGS=10V, ID=11.5A 9.4 nC 6 2071 VDS=30V,VGS=0V, f=1.0MHz 704 pF 28 19.5 VDS=50V, RL =4.35Ω 37.6 VGS=10V,RG=3Ω ID=11.5A ns 41 13 43 ns 56 nC ID=11.5A,VGS=0V,di/dt=100A/us Qrr Reverse Recovery Charge Notes: a. Based on epoxy or solder paste and bond wire Cu 1.5mil x1 (G), Al 15mil x2 (S) on each die of TO-220 package. b. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%. c. Force mos reserves the right to improve product design, functions and reliability without notice. 0 2 2 May, 2018-Ver1.0 HP3710T/HB3710T T T N-Channel 100V(D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) 3 May, 2018-Ver1.0 03 HP3710T/HB3710T T N-Channel 100V(D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) 4 May, 2018-Ver1.0 04 TO-263 HP3710T/HB3710T Package Dimension 5 HP3710T/HB3710T TO-220 ±0.20 84 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 6