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HD840U(CHA)

HD840U(CHA)

  • 厂商:

    HL(豪林)

  • 封装:

    TO-252-2(DPAK)

  • 描述:

    类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电...

  • 详情介绍
  • 数据手册
  • 价格&库存
HD840U(CHA) 数据手册
BVDSS = 500 V RDS(on) typ = 0.75 Ω HD840U/HU840U ID = 8.0 A 500V N-Channel MOSFET TO-252 TO-251 FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 25 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.75 Ω (Typ.) @V GS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 500 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 8.0 A Drain Current – Continuous (TC = 100℃) 5.4 A IDM Drain Current – Pulsed 36 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ IAR Avalanche Current (Note 1) 8.0 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 135 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 1.07 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.93 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units ℃/W HD840U/HU840U Sep 2011 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 4.0 A -- 0.75 0.85 Ω VGS = 0 V, ID = 250 ㎂ 500 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.57 -- V/℃ VDS = 500 V, VGS = 0 V -- -- 1 ㎂ VDS = 400 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 1000 1300 ㎊ -- 130 170 ㎊ -- 20 26 ㎊ -- 25 50 ㎱ -- 60 120 ㎱ -- 130 260 ㎱ -- 90 180 ㎱ -- 25 33 nC -- 6 -- nC -- 12 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 250 V, ID = 8.0 A, RG = 25 Ω (Note 4,5) VDS = 400V, ID = 8.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 8.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 36 VSD Source-Drain Diode Forward Voltage IS = 9.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 335 -- ㎱ Qrr Reverse Recovery Charge IS = 9.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 2.95 -- μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=8mH, IAS=8.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature A HD840U/HU840U Electrical Characteristics TC=25 °C HD840U/HU840U Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 2000 Ciss Coss 1000 500 * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] 1500 Capacitances [pF] 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V VDS = 250V 10 VDS = 400V 8 6 4 2 * Note : ID = 9.0 A 0 10-1 0 100 101 0 5 10 15 20 25 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 30 HD840U/HU840U Typical Characteristics (continued) Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 10 Operation in This Area is Limited by R DS(on) 10 µs 8 100 ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms 101 DC 10-1 * Notes : 1. TC = 25 oC 10-2 100 6 4 2 2. TJ = 150 oC 3. Single Pulse 101 102 0 25 103 50 75 100 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 D=0.5 * Notes : 1. ZθJC(t) = 0.93 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 10-1 0.1 0.05 0.02 0.01 PDM single pulse t1 10-2 10-5 10-4 125 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response ID, Drain Current [A] 102 10-3 10-2 10-1 t2 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 101 150 HD840U/HU840U Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HD840U/HU840U Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TO-252 Package Outline Drawing 承认 HUANGFENGRONG 校对 SUNHONGWEI 1/1 制图 ZSS Package Outline Drawing 图号 DB45B000 ., 版别 1.0 图名 TO-252 单位 mm 页次 TO-251 Package Outline Drawing 版别 1.0 图名 TO-251 承认 HUANGFENGRONG 校对 SUNHONGWEI 1/1 制图 ZSS Package Outline Drawing 图号 DB45A000 单位 mm 页次
HD840U(CHA)
物料型号: HD840U/HU840U

器件简介: - 500V N-Channel MOSFET - 具有原创新设计、优越的雪崩坚固技术、坚固的栅氧技术、非常低的内在电容、出色的开关特性、无与伦比的栅电荷:25 nC(典型值)、扩展的安全工作区、更低的RDS(ON):0.75 Ω(典型值)@VGS=10V、100%雪崩测试。

引脚分配: - 1. Gate(栅极) - 2. Drain(漏极) - 3. Source(源极)

参数特性: - 绝对最大额定值包括漏源电压500V、栅源电压±30V、连续漏电流8.0A等。 - 热阻特性包括结到外壳热阻0.93°C/W、外壳到散热器热阻0.5°C/W等。

功能详解: - 电气特性包括阈值电压、导通电阻、漏源击穿电压等。 - 动态特性包括输入电容、输出电容和反向传输电容。 - 开关特性包括导通时间、延迟时间、栅极电荷等。

应用信息: - 提供了关于器件在不同条件下的典型特性图表,如导通区域特性、转移特性、导通电阻随漏电流和栅电压变化、体二极管正向电压随源电流和温度变化等。

封装信息: - 提供了TO-252和TO-251封装的外形图和尺寸。
HD840U(CHA) 价格&库存

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