1H05

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 1H05 N-Channel MOSFET V(BR)DSS 100 V ID RDS(on)MAX   SOT-23 234mΩ@10V  247mΩ@ 6V  5A 258mΩ@4.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET z Low RDS(ON) z Surface Mount Package MARKING APPLICATION z DC/DC Converters z Load Switch z LED Backlighting in LCD TVs Equivalent Circuit 1H05 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 5 A Pulsed Drain Current IDM* 8 A Thermal Resistance from Junction to Ambient Continuous Drain Current RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature. 1 A-3,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =250µA 2.8 V Gate threshold voltage(note 1) Drain-source on-resistance (note 1) RDS(on) 100 V 1.2 VGS =10V, ID =5A 234 mΩ VGS =4.5V, ID =1A 257 mΩ VGS =10V,ID =1A 220 mΩ Forward tranconductance (note 1) gFS VDS =20V, ID =2.5A Diode forward voltage (note 1) VSD IS=1.3A, VGS = 0V 2 S 1.2 V DYNAMIC PARAMETERS (note2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VDS =50V,VGS =0V,f =1MHz 190 pF 22 pF 13 pF 0.3 2.8 Ω 45 ns VDD=50V,VGEN=4.5V 39 ns RL=39Ω,RG=1Ω,ID=1.3A 26 ns tf 20 ns Total Gate Charge Qg 5.8 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd F=1MHz SWITCHING PARAMETERS (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Notes : td(on) tr td(off) VDS =50V,VGS =4.5V,ID=1.6A 0.75 nC 1.4 nC 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. 2 A-3,Apr,2015 Typical Characteristics Transfer Characteristics Output Characteristics 10 5.0 Pulsed 9 VDS=3V 4.5 Pulsed VGS=8V,10V,12V (A) 4.0 VGS=3.8V 6 3.0 5 VGS=3.5V 4 3 2 0 1 2 3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 280 4 1.5 VDS 0.0 5 0 1 2 (V) 3 4 5 GATE TO SOURCE VOLTAGE ID RDS(ON) 900 Ta=25℃ Pulsed —— VGS 6 (V) VGS 800 600 200 VGS=10V Ta=100℃ Pulsed 400 300 Ta=25℃ Pulsed 200 VGS=6V 180 ID=0.8A 500 VGS=4.5V 220 (mΩ) 240 700 RDS(ON) 260 ON-RESISTANCE (mΩ) Ta=25℃ Ta=100℃ 2.0 0.5 0 RDS(ON) 2.5 1.0 VGS=3V 1 ON-RESISTANCE 3.5 ID 7 DRAIN CURRENT DRAIN CURRENT ID (A) 8 100 160 0 0 1 2 3 4 DRAIN CURRENT ID 5 0 4 6 8 GATE TO SOURCE VOLTAGE (A) IS —— VSD 6 2 VGS 10 (V) Threshold Voltage 2.1 2.0 VTH Ta=100℃ Pulsed THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 Ta=25℃ Pulsed 0.1 0.01 1.9 1.8 ID=250uA 1.7 1.6 1.5 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 1.4 1.4 25 1.6 VSD (mV) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-3,Apr,2015 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout 4 A-3,Apr,2015