HD7N50E(BHB)

H D7N50E 530V N-Channel MOSFET FEATURES ⚫ Fast switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Enhanced ESD protection APPLICATIONS ⚫ Switch Mode Power Supply (SMPS) ⚫ Uninterruptible Power Supply (UPS) ⚫ Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking HD7N50E TO-252 HD7N50E Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Symbol Value Unit VDSS 530 V ID 7 A IDM 24 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 73 mJ Avalanche Current (note1) IAS 4.5 A Repetitive Avalanche Energy (note1) EAR 43.3 mJ PD 45 W TJ, Tstg -55~+150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 1.98 Thermal Resistance, Junction-to-Ambient RthJA 62.5 Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Parameter ºC/W 1 V3.0 H D7N50E Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 530 -- -- V Zero Gate Voltage Drain Current IDSS VDS =550, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 3.5A -- 1.05 1.3 Ω -- 750 -- -- 86 -- Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 11.5 -- Total Gate Charge Qg -- 15.5 -- Gate-Source Charge Qgs -- 2.9 -- Gate-Drain Charge Qgd -- 6.4 -- Turn-on Delay Time td(on) -- 15 -- Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 80 -- -- 35 -- -- -- 7 -- -- 24 Turn-off Fall Time VDD = 440V, ID = 7A, VGS = 10V VDD = 275V, ID =7A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 3.5A, GS V = 0V -- -- 1.4 V Reverse Recovery Time trr -- 100 -- ns Reverse Recovery Charge Qrr VGS = 0V,IS = 7A, diF/dt =100A /μs -- 0.45 -- μC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=10mH, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 2 V3.0 H D7N50E Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage 102 16 ID, Drain Current (A) 12 10 8 IS, Source Current (A) 20V 10V 8V 7V 6V 5V 14 6 4 2 0 0 2 4 6 8 10 12 14 16 18 TJ = 150ºC 101 TJ = 25ºC 100 10-1 20 0.2 VDS, Drain-to-Source Voltage (V) 0.8 1 1.2 1.4 Figure 4. BVDSS Variation vs. Temperature 9 1.2 VGS = 0V ID=250uA 8 1.15 7 BVDSS (Normalized) ID, Drain Current (A) 0.6 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature 6 5 4 3 2 1.1 1.05 1 0.95 1 0 25 50 75 100 125 0.9 150 -50 TC, Case Temperature (A) RDS(on), On-Resistance (Normalized) TJ = 25ºC 7 6 5 TJ = 150ºC 4 3 2 1 0 0 2 4 6 0 25 50 75 100 125 150 Figure 6. On-Resistance vs. Temperature 9 8 -25 T C, Case Temperature (ºC) Figure 5. Transfer Characteristics ID, Drain Current (A) 0.4 8 10 3 VGS = 10V ID=4A 2.5 2 1.5 1 0.5 0 -75 VGS, Gate-to-Source Voltage (V) -25 25 75 125 TJ, Junction Temperature (ºC) 3 V3.0 H D7N50E Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 104 VGS, Gate-to-Source Voltage (V) 10 Capacitance (pF) Ciss 103 Coss 102 Crss 101 VGS = 0V f = 1MHz 100 0 10 VDD = 100V 8 VDD = 250V VDD = 400V 6 4 2 0 20 30 40 50 0 60 VDS, Drain-to-Source Voltage (V) 5 10 15 20 25 Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance TO-220F ZthJC, Thermal Impedance (ºC/W) 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 V3.0 H D7N50E Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform 5 V3.0 H D7N50E TO-252 6 V3.0