HD5N65(BEB)

BVDSS = 650 V RDS(on) typ = 2.1 Ω HD5N65 / HU5N65 ID = 5 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HD5N60  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HU5N60 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.1Ω (Typ.) @V GS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 650 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 5 A Drain Current – Continuous (TC = 100℃) 2.6 A IDM Drain Current – Pulsed 18 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25℃) * 3.13 W Power Dissipation (TC = 25℃) - Derate above 25℃ 100 W 0.8 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 1.25 RθJA Junction-to-Ambient* -- 40 RθJA Junction-to-Ambient -- 62.5 * When mounted on the minimum pad size recommended (PCB Mount) Units ℃/W HD5N65_HU5N65 Nov 2019 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 2.25 A -- 2.1 2.4 Ω 650 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.6 -- V/℃ VDS = 600 V, VGS = 0 V -- -- 1 ㎂ VDS = 480 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 ㎂ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 520 680 ㎊ -- 60 80 ㎊ -- 8.0 10.5 ㎊ -- 11 33 ㎱ -- 45 90 ㎱ -- 40 88 ㎱ -- 48 100 ㎱ -- 10.5 13.5 nC -- 2.5 -- nC -- 4.0 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 4.5 A, RG = 25 Ω (Note 4,5) VDS = 480V, ID = 4.5 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 5 ISM Pulsed Source-Drain Diode Forward Current -- -- 18 VSD Source-Drain Diode Forward Voltage IS = 4.5 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 300 -- ㎱ Qrr Reverse Recovery Charge IS = 4.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 2.2 -- μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=18.9mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤4.5A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature A HD5N65_HU5N65 Electrical Characteristics TC=25 °C HD5N65_HU5N65 ID, Drain Current [A] ID , Drain Current [A] Typical Characteristics 101 150oC 25oC 0 10 -55oC * Note 1. VDS = 50V 2. 250µs Pulse Test 10-1 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(on) , [Ω] Drain-Source On-Resistance 6 5 VGS = 10V 4 3 VGS = 20V 2 1 101 100 150oC 25oC * Note : 1. VGS = 0V 2. 250µs Pulse Test o * Note : TJ = 25 C 0 0 2 4 6 8 10-1 0.2 10 0.4 0.8 1.0 1.2 1.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 Ciss 600 Coss 400 * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 VGS, Gate-Source Voltage [V] 12 1000 Capacitances [pF] 0.6 VSD , Source-Drain Voltage [V] ID , Drain Current [A] VDS = 120V 10 VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 4.5A 0 10-1 0 100 101 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 (continued) 1.2 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HD5N65_HU5N65 Typical Characteristics 1.1 1.0 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 * Note : 1. VGS = 10 V 2. ID = 2.25 A 0.0 -100 200 -50 o 50 100 150 200 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 5 Operation in This Area is Limited by R DS(on) 100 µs 101 ID, Drain Current [A] 4 1 ms 10 ms 100 ms 100 DC -1 10 * Notes : 1. TC = 25 oC 10-2 100 3 2 1 2. TJ = 150 oC 3. Single Pulse 101 102 0 25 103 50 75 100 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 D=0.5 0.2 10-1 * Notes : 1. ZθJC(t) = 1.25 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 0.05 0.02 0.01 PDM single pulse 10-2 10-5 t1 10-4 125 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response ID, Drain Current [A] 0 TJ, Junction Temperature [oC] TJ, Junction Temperature [ C] 10-3 10-2 10-1 t2 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 101 150 HD5N65_HU5N65 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HD5N65_HU5N65 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD HD5N65_HU5N65 Package Dimension HD5N65_HU5N65 Package Dimension