5N10-MS

www.msksemi.com 5N10-MS Semiconductor SOT23 Pin Configuration Compiance Product Summary BVDSS RDSON 100V 105 mΩ ID 5A  Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V IDM PD@TA=25℃ 2.2 A Current2 11 A Dissipation3 1 W Pulsed Drain Total Power 1 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 125 ℃/W RθJC Thermal Resistance Junction-Case1 --- 80 ℃/W www.msksemi.com 5N10-MS Semiconductor Electrical Characteristics TC=25℃ Symbol Compiance unless otherwise specified Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 100 110 - V IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA 1.0 1.95 3.0 V - 105 140 mΩ - 196 - pF - 25.9 - pF - 21.4 - pF - 4.3 - nC - 3.5 - nC - 3.1 - nC - 14.7 - ns - 3.5 - ns - 20.9 - ns - 2.7 - ns On Characteristics note3 VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance note2 VGS = 10V, ID = 3A Dynamic Characteristics note4 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge Switching Characteristics VDS = 50V, VGS = 0V, f = 1.0MHz VDS = 50V, ID = 3A, VGS = 10V note4 td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, IDS=3A RG = 2Ω, VGEN = 10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current note2 - - 4.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 12 A VSD Drain to Source Diode Forward Voltage - - 1.3 V trr Body Diode Reverse Recovery Time - 32.1 - ns Qrr Body Diode Reverse Recovery Time Charge - 39.4 - nC Irrm Peak Reverse Recovery Current - 2.1 - A note3 VGS = 0V, IS =3A VGS = 0V, IF = 3A, di/dt =100A/μs Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2%. 4. Guaranteed by design, not subject to production 5. VDD=50 V, RG=50 Ω, L=0.3 mH, starting Tj=25 °C www.msksemi.com 5N10-MS Semiconductor Compiance Typical Characteristics 4 4 VGS = 10V VDS= 5V VGS = 4.5V 3 VGS = 3.5V Drain current ID (A) Drain current ID (A) 3 2 VGS = 2.5V 1 2 1 VGS = 2V 0 0 1 2 3 4 0 5 0 Drain−source voltage VDS (V) Figure 1. Output Characteristics 1 2 3 4 Gate−source voltage VGS (V) Figure 2. Transfer Characteristics 2 1200 On-Resistance RDS (on) (mΩ) Source current IS (A) ID= 2A 1.5 1 0.5 0 900 600 300 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 3 Source−drain voltage VSD (V) 500 2.5 400 2.0 VGS = 4.5V 200 VGS = 10V 100 0 9 12 15 Figure 4. RDS(ON) vs. VGS Normalized RDS (on) On-Resistance R DS (on) (mΩ) Figure 3. Forward Characteristics of Reverse 300 6 Gate−source voltage VGS (V) 1.5 1.0 0.5 0 0.5 1 1.5 2 Drain current I-IDD(A) (A) Figure 5. RDS(ON) vs. ID 2.5 3 0.0 -50 -25 0 25 50 75 100 Temperature Tj(°C) 125 150 Figure 6. Normalized RDS(on) vs. Temperature 3 www.msksemi.com 5N10-MS Semiconductor Compiance 10000 Capacitance（pF） 1000 Ciss 100 Coss 10 Crss F=1.0MHz 1 0 20 40 60 80 100 Drain-source voltage VDS（V） Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics www.msksemi.com 5N10-MS Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° REEL SPECIFICATION P/N 5N10-MS PKG QTY SOT-23 3000 www.msksemi.com 5N10-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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