AO4842-MS

www.msksemi.com AO4842-MS Semiconductor Compiance D1 D1 D2 D2 Product Summary VDS 30V 6A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 30m RDS(ON) (at VGS =4.5V) < 42m S1 G1 S2 G2 SOP-8 General Description D1 8 D1 7 6 D2 D2 2 3 4 5 The AO4842-MSuses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM 1 S1 applications. TA=25°C G2 Avalanche Current C Avalanche energy L=0.1mH C TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Steady-State Steady-State ±20 V 5 A 30 IAS, IAR 10 A EAS, EAR 5 mJ 2 W 1.3 TJ, TSTG Symbol t ≤ 10s Units V IDM PD TA=70°C Maximum 30 6 ID TA=70°C Pulsed Drain Current C Power Dissipation B S2 N-Channel MOSFET Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage V Gate-Source Voltage GS Continuous Drain Current G1 RJA RJL -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.msksemi.com AO4842-MS Semiconductor Compiance Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V Typ V VDS=30V, VGS=0V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 1.8 48 VGS=4.5V, ID=5A 33 42 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) V 40 TJ=125°C 15 Gate resistance 2.4 30 VDS=5V, ID=6A Rg nA 25 Forward Transconductance Reverse Transfer Capacitance ±100 A gFS Output Capacitance 255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=6A A 5 VGS=10V, ID=6A Crss Units 30 IDSS Coss Max m m S 1 V 2.5 A 310 pF 45 1.6 pF 35 50 pF 3.25 4.9  5.2 6.3 nC 2.55 3.2 nC Qgs Gate Source Charge Qgd tD(on) tr tD(off) Turn-On Rise Time tf trr Turn-Off Fall Time IF=6A, dI/dt=100A/s 8.5 ns Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s 2.2 nC 0.85 nC Gate Drain Charge 1.3 nC Turn-On DelayTime 4.5 ns 2.5 ns 14.5 ns 3.5 ns Turn-Off DelayTime Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=2.5, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using