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BC857S
Semiconductor
Compiance
BC857S
DUAL TRANSISTOR (PNP+PNP)
Isolated Transistor and Diode
FEATURES
Two transistors in one package
z
z
Reduces number of components and board space
No mutual interference between the transistors
z
SOT-363
MARKING: 3F
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector- Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.2
A
PC
Collector Power Dissipation
0.3
W
RθJA
Thermal Resistance from Junction to Ambient
417
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
stg
℃/W
ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
M ax
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-10mA,IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
DC current gain
hFE
VCE=-5V,IC=-2mA
-15
125
nA
630
VCE(sat)(1)
IC=-10mA,IB=-0.5mA
-0.3
V
VCE(sat)(2)
IC=-100mA,IB=-5mA
-0.65
V
-0.75
V
-0.82
V
Collector-emitter saturation voltage
VBE(1)
VCE=-5V,IC=-2mA
VBE(2)
VCE=-5V,IC=-10mA
-0.6
Base-emitter voltage
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
VCE=-5V,IC=-10mA,f=100MHz
200
MHz
VCB=-10V,IE=0,f=1MHz
3.5
pF
2.5
dB
VCE=-5V,Ic=-0.2mA,
f=1kHZ,Rs=2KΩ,BW=200Hz
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BC857S
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.100
0.150
2.000
2.200
1.150
1.350
2.150
2.400
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.004
0.006
0.079
0.087
0.045
0.053
0.085
0.094
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
REEL SPECIFICATION
P/N
PKG
QTY
BC857S
SOT-363
3000
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BC857S
Semiconductor
Compiance
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