FDV302P

www.msksemi.com FDV302P Semiconductor Compiance Features Ｄ  -30V,-0.2A, RDS(ON) =4.0Ω@VGS = -10V  Improved dv/dt capability  Fast switching Ｇ  Green Device Available Ｓ SOT-23 Applications G  Notebook 1 3 S  Load Switch D 2  Battery Protection  Hand-held Instruments Absolute Maximum Ratings BVDSS RDSON ID -30V 4.0Ω -0.2A Tc=25℃ unless otherwise noted Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID IDM PD Drain Current – Continuous (TA=25℃) -0.2 A Drain Current – Continuous (TA=70℃) -0.1 A Drain Current – Pulsed1 -0.8 A Power Dissipation (TA=25℃) 1.0 W Power Dissipation – Derate above 25℃ 12.5 mW/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to ambient Typ. --- Max. Unit 80 ℃/W www.msksemi.com FDV302P Semiconductor Compiance Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics Symbol BVDSS Parameter Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Conditions VGS=0V , ID=-250uA VDS=-30V , VGS=0V , TJ=25℃ Min. -30 Typ. Max. Unit --- --- V uA --- -1 -10 --- --- ±20 uA --- 4.0 8.0 --- 8.0 10 --- --- --- VGS=±20V , VDS=0V VGS=-10V , ID=-0.2A VDS=-25V , VGS=0V , TJ=125℃ VGS=-4.5V , ID=-0.1A VGS=VDS , ID =-250uA VDS=-10V , ID=-0.2A uA  -1.0 -1.6 -2.5 V --- 0.4 --- S --- 2.8 --- --- 0.96 --- --- 0.6 --- --- 3 --- --- 5 --- --- 14 --- --- 9 --- Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 Qgs Gate-Source Qgd Gate-Drain Charge2 , 3 Td(on) Tr Td(off) Tf Charge2 , 3 Turn-On Delay Rise Time2 , 3 VDD=-30V , VGS=-10V , RG=6 Time2 , 3 Turn-Off Delay VDS=-30V , VGS=-10V , ID=-0.2A Time2 , 3 ID=-0.2A Fall Time2 , 3 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-30V , VGS=0V , F=1MHz nC ns --- 30.5 --- --- 15.1 --- --- 7 --- Min. Typ. Max. Unit --- --- -0.2 A --- --- -0.4 A pF Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current Conditions VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=-0.2A , TJ=25℃ --- --- -1.3 V Trr Reverse Recovery Time VR=-30V, IS=-0.2A --- 13.5 --- nS Qrr Reverse Recovery Charge di/dt=100A/μs, TJ=25℃ --- 3 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. www.msksemi.com FDV302P Compiance Normalized On Resistance -ID , Continuous Drain Current (A) Semiconductor TJ , Junction Temperature (℃) Continuous Drain Current vs. TC Fig.2 TJ , Junction Temperature (℃) Normalized RDSON vs. TJ -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage Fig.1 Fig.5 Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform -ID , Continuous Drain Current (A) Normalized Thermal Response (RθJA) Fig.3 TJ , Junction Temperature (℃) Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Transient Impedance Fig.6 -VDS , Drain to Source Voltage (V) Maximum Safe Operation Area www.msksemi.com FDV302P Semiconductor Compiance -VDS 90% 10% -VGS Td(on) Tr Ton Fig.7 Td(off) Tf Toff Switching Time Waveform Fig.8 Gate Charge Waveform www.msksemi.com FDV302P Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° REEL SPECIFICATION P/N FDV302P PKG QTY SOT-23 3000 www.msksemi.com FDV302P Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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