ESD9B5.0ST5G

www.msksemi.com ESD9B5.0ST5G Semiconductor Compiance Feature 80W peak pulse power per line (tP = 8/20μs) SOD-923 package Replacement for MLV(0402) Bidirectional configurations Response time is typically < 1ns Low clamping voltage RoHS compliant Transient protection for data lines to EC61000-4-2(ESD) ±30KV(air), ±30KV(contact ); IEC61000-4-4 (EFT) 40A (5/50ns) Applications Cellular phones SOD-923 Portable devices Digital cameras Power supplies Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260℃ Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:≤3mil Electronics Parameter Symbol Parameter VRWM Peak Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP PPP Peak Pulse Power CJ Junction Capacitance IF Forward Current VF Forward Voltage @ IF IPP VC VBR VRW M IT IR I IR IT VRW M VBR VC V IPP www.msksemi.com ESD9B5.0ST5G Semiconductor Compiance Electrical characteristics per line@25℃ (unless otherwise specified) Parameter Symbol Conditions Min. Peak Reverse Working Voltage VRWM Breakdown Voltage VBR It = 1mA Reverse Leakage Current IR VRWM = 5V T=25℃ Maximum Reverse Peak Pulse Current IPP Clamping Voltage VC IPP=1A 8 V Clamping Voltage VC IPP=3A 13 V Clamping Voltage VC IPP=5A 15 V Junction Capacitance Cj VR=0V f = 1MHz 15 pF 5.6 Typ. Max. Units 5 V 7.8 V 1.0 μA 6.7 A 5 12 Absolute maximum rating@25℃ Rating Symbol Value Units Peak Pulse Power (tp=8/20μs) Ppp 80 W Operating Temperature TJ -55 to +150 ℃ Storage Temperature TSTG -55 to +150 ℃ Typical Characteristics 100 80 80 60 % Of Rated Power IPP – Peak Pulse Current - % of IPP tf=8μs 100 tP =20μs( IPP /2) 40 20 60 40 20 0 0 5 10 15 20 t - Time -μs Fig 1.Pulse Waveform 25 30 0 0 25 50 75 100 125 150 TL – Lead Temperature - ℃ Fig 2.Power Derating Curve www.msksemi.com ESD9B5.0ST5G Semiconductor Compiance 20 16 7.1 6.9 12 IR(nA) Breakdown Voltage (V) (VZ @ IZ) 7.3 8 6.7 4 6.5 6.3 -55 +25 0 +150 0 25 50 Temperature (ºC) 75 100 125 150 Temperature (ºC) Fig 3.Typical Breakdown Voltage vs. Temperature Fig 4.Typical Leakage Current vs. Temperature 20 1000 Pulse waveform: tp=8/20us Peak Pulse Power (W) VC-Clamping Voltage (V) 16 12 8 4 0 0 2 4 6 IPP-Peak pulse current (A) Fig 5. Clamping voltage vs. Peak pulse current 8 100 10 1 1 10 100 1000 Pulse Duration(us) Fig 6. Non-Repetitive Peak Pulse Power vs. Pulse time www.msksemi.com ESD9B5.0ST5G Semiconductor Compiance PACKAGE MECHANICAL DATA Dim Millimeters Inches Min Nom Max Min Nom Max A 0.36 0.40 0.43 0.014 0.016 0.017 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.07 0.12 0.17 0.003 0.005 0.007 D 0.75 0.80 0.85 0.030 0.031 0.033 E 0.55 0.60 0.65 0.022 0.024 0.026 HE 0.95 1.00 1.05 0.037 0.039 0.041 L 0.05 0.10 0.15 0.002 0.004 0.006 Dimensions: Millimeters REEL SPECIFICATION P/N PKG QTY ESD9B5.0ST5G SOD-923 8000 www.msksemi.com ESD9B5.0ST5G Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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