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ES1C

ES1C

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMA(DO-214AC)

  • 描述:

  • 数据手册
  • 价格&库存
ES1C 数据手册
ES1A THRU ES1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features DO-214AC/SMA  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: 0.110(2.80) 0.094(2.40) 0.067 (1.70) 0.051 (1.30) 0.177(4.50) 0.157(3.99) 0.012(0.305) 0.006(0.152)  250°C/10 seconds at terminals Glass passivated chip junction 0.096(2.42) 0.078(1.98) Mechanical Data 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.208(5.30) 0.188(4.80) Case : JEDEC DO-214AC/SMA Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.0019ounce, 0.055 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM VRMS VDC I(AV) Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM Maximum instantaneous forward voltage at 1.0A VF Maximum DC reverse current at rated DCblocking voltage TA=25℃ MDD ES1A MDD ES1B MDD ES1C MDD ES1D MDD ES1E MDD ES1G MDD ES1J UNITS 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 V V V 1.0 A 30 A 1 1.25 1.7 V 5 100 35 uA CJ 15.0 pF Typical thermal resistance (NOTE 3) RJA 75.0 ℃/W Operating junction and storage temperature range TJ,TSTG -55 to +150 ℃ Maximum reverse recovery time TA=125℃ (NOTE 1) Typical junction capacitance (NOTE 2) IR trr ns Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 1.0”x1.0”(2.54x2.54cm) copper pad areas DN:T21312A1 http://www.microdiode.com Rev:2021A1 Page :1 ES1ATHRU ES1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Ratings And Characteristic Curves Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 10 ohm Noninductive 50 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 0.2 Single phase half wave resistive or inductive 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Case Temperature (°C) Junction Capacitance (pF) Instaneous Forward Current (A) Fig.5 Typical Junction Capacitance 1.0 ES1A~ES1D ES1E/ES1G 0.1 ES1J 0.01 0.001 0.5 100 30 T J =25°C 0 80 60 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 10 40 20 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 25 20 15 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 05 0.1 1 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2021A1 Page :2 ES1A THRU ES1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SMA A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.80 5.33 2.36 1.50 330.00 50.00 178.00 62.00 13.00 1.75 5.50 4.00 4.00 2.00 0.28 12.00 18.00 E F B A Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width W P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE SMA REEL SIZE 7" APPROX. GROSS WEIGHT (kg) REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 2,000 4.0 4,000 183*155*183 178 382*356*392 80,000 16.0 10,000 290*290*38 330 310*310*360 80,000 11.0 15,000 335*335*38 330 350*330*360 120,000 14.5 SMA 11" 5,000 4.0 SMA 13" 7,500 4.0 CARTON SIZE (m/m) CARTON (pcs) Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) A 1.68 0.066 B 1.52 0.060 C 3.90 0.154 D 2.41 0.095 E 5.45 0.215 Unit (inch) Rev:2021A1 Page :3

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