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ES3EB

ES3EB

  • 厂商:

    MDD(辰达半导体)

  • 封装:

  • 描述:

  • 数据手册
  • 价格&库存
ES3EB 数据手册
ES3AB THRU ES3JB Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features DO-214AA/SMB  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: 0.155(3.94) 0.130(3.30) 0.086 (2.20) 0.071 (1.80) 0.185(4.70) 0.160(4.06) 0.012(0.305) 0.006(0.152)  250°C/10 seconds at terminals Glass passivated chip junction 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.76) Mechanical Data 0.008(0.203)MAX. 0.220(5.59) 0.200(5.08) Case : JEDEC DO-214AA/SMB Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.003 ounce, 0.1grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=100℃ VRRM VRMS VDC I(AV) Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM Maximum instantaneous forward voltage at 3.0A VF Maximum DC reverse current at rated DCblocking voltage IR Maximum reverse recovery time TA=25℃ TA=125℃ (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range MDD MDD ES3AB ES3BB 50 35 50 MDD MDD ES3CB ES3DB 100 70 100 150 105 150 MDD MDD ES3EB ES3GB 200 140 200 300 210 300 400 280 400 MDD ES3JB UNITS 600 420 600 V V V 3.0 A 90 A 1 1.25 1.68 V μA trr 5 100 35 CJ 45 pF RθJA 50 16 ℃/W RθJC TJ,TSTG -55 to +150 ns ℃ Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 2.0”x2.0”(5.0x5.0cm) copper pad areas DN:T21312A1 http://www.microdiode.com Rev:2021A1 Page :1 ES3AB THRU ES3JB Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere Ratings And Characteristic Curves Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram trr 10 ohm Noninductive 50 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.5 300 3.0 100 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load TJ=125°C 10 TJ=75°C 1.0 TJ=25°C 0.1 0.0 25 50 75 100 125 150 0 175 20 Case Temperature (°C) 80 100 Fig.5 Typical Junction Capacitance 10 Junction Capacitance (pF) Instaneous Forward Current (A) 60 % of PIV.VOLTS Fig.4 Typical Forward Characteristics TJ=25°C 1.0 ES3AB~ES3DB ES3EB/ES3GB 0.1 40 ES3JB 0.01 TJ=25°C 100 10 TJ=25°C f = 1.0MHz Vsig = 50mVp-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 150 140 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles http://www.microdiode.com Rev:2021A1 Page :2 ES3AB THRU ES3JB Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere Packing information P0 P1 unit:mm d E Item F B A Symbol Tolerance SMB A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.41 2.42 1 5.0 330.00 50.00 13.00 1.75 5.55 8.00 4.00 2.00 0.30 12.00 12.30 W Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE SMB REEL SIZE REEL (pcs) COMPONENT SPACING (mm) 13" 3,000 4.0 INNER BOX (mm) REEL DIA, (mm) CARTON SIZE (mm) CARTON (pcs) 190*190*41 330 365*365*360 48,000 BOX (pcs) 6,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout Symbol A B C D E http://www.microdiode.com Unit (mm) 2.8 2.4 Unit (inch) 0.110 4.6 0.094 0.181 2.2 7.0 0.086 0.276 Rev:2021A1 Page :3
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