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ES3ABF

ES3ABF

  • 厂商:

    MDD(辰达半导体)

  • 封装:

  • 描述:

  • 数据手册
  • 价格&库存
ES3ABF 数据手册
ES3ABF THRU ES3JBF Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features SMBF  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: 0.146(3.70) 0.138(3.50) 0.086 (2.20) 0.075 (1.90) 0.173(4.40) 0.165(4.20)  250°C/10 seconds at terminals Glass passivated chip junction 0.051(1.30) 0.043(1.10) 0.010(0.26) 0.007(0.18) 0.048(1.20) 0.031(0.80) Mechanical Data 0.216(5.50) 0.200(5.10) Case : JEDEC SMBF Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.002 ounce, 0.055 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter ES3ABF ES3BBF ES3CBF ES3DBF ES3EBF ES3GBF ES3JBF SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRRM VRMS VDC MDD E3AB MDD E3BB MDD E3CB MDD E3DB MDD E3EB MDD E3GB MDD E3JB 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 UNITS V V V Maximum average forward rectified current at TL=55℃ I(AV) 3.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 80 A Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current at rated DCblocking voltage Maximum reverse recovery time TA=25℃ TA=125℃ (NOTE 1) Typical junction capacitance (NOTE 2) VF IR 1 1.25 1.70 V 5.0 100.0 μA trr 35 ns CJ 35.0 45.0 pF Typical thermal resistance (NOTE 3) RJA Operating junction and storage temperature range TJ,TSTG -55 to +150 ℃/W ℃ Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas DN:T23301A2 http://www.microdiode.com Rev:2023A2 Page :1 ES3ABF THRU ES3JBF Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere Ratings And Characteristic Curves t rr 10 ohm Noninductive 50 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 4.0 300 3.5 100 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 20 0 40 Case Temperature (°C) Junction Capacitance (pF) Instaneous Forward Current (A) T J =25°C 1.0 ES3ABF~ES3DBF ES3EBF/WS3GBF 0.1 80 100 Fig.5 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 10 60 % of PIV.VOLTS ES3JBF 0.01 T J =25°C 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surge Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surge Current 90 75 60 45 30 15 8.3 ms Single Half Sine Wave (JEDEC Method) 00 10 1 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2023A2 Page :2 ES3ABF THRU ES3JBF Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere Packing information P0 unit:mm P1 d E F B A W P D2 T D1 C W1 D Item Symbol Tolerance SMBF Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width A B C d D D1 D2 E F P P0 P1 T W Reel width W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.61 1.60 1 50 . 330.00 50.00 13.00 1.75 5.50 4.00 4.00 2.00 0.30 12.00 12.30 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (mm) BOX (pcs) INNER BOX (mm) REEL DIA, (mm) SMBF 13" 5,000 4.0 10,000 190*190*41 330 CARTON SIZE (mm) 365*365*360 CARTON (pcs) 80,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) A 2.54 0.100 B 1.8 0.071 C 4.8 0.189 D 3.0 0.118 E 6.6 0.260 Unit (inch) Rev:2023A2 Page :3
ES3ABF 价格&库存

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